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PDF SKM200GBD123D1S Data sheet ( Hoja de datos )
| Número de pieza | SKM200GBD123D1S | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron | |
| Logotipo |  |
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Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40 040
DIN IEC 68 T.1
Diodes
IF= – IC
IFM= – ICM
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
Values
1200
1200
200 / 180
400 / 360
± 20
1380
– 40 . . .+150 (125)
2 500 7)
Class F
40/125/56
Inverse D. 9) Series 6)
25 / 15 260 / 180
50 / 30 600 / 400
Units
V
V
A
A
V
W
°C
V
A
A
Characteristics
Symbol Conditions 1)
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 4 mA
VGE = VCE, IC = 6 mA
VGE
VCE
=
=
0
VCES
Tj
Tj
=
=
25
125
°C
°C
VGE = 20 V, VCE = 0
IC
IC
=
=
150
200
A
A
VGE
Tj =
= 15 V;
25 (125)
°C
VCE = 20 V, IC = 150 A
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
td(on)
tr
td(off)
tf
Eon 5)
Eoff 5)
VCC = 600 V
VGE = -15 V / +15 V3)
IC = 150 A, ind. load
RGon = RGoff = 5,6 Ω
Tj = 125 °C
Inverse Diode 8) D1, D2 9)
VF = VEC
VF = VEC
IF =
IF =
15
25
A
A
VGE
Tj =
= 0 V;
25 (125)
°C
VTO Tj = 125 °C
rT
IRRM
Qrr
Tj = 125 °C
IF = 150 A; Tj = 25 (125) °C2)
IF = 150 A; Tj = 25 (125) °C2)
Series Diodes D3, D4 8) 6)
VF = VEC
VF = VEC
VTO
IF
IF
=
=
200
300
A
A
VGE
Tj =
= 0 V;
25 (125)
°C
Tj = 125 °C
rT
IRRM
Qrr
Tj = 125 °C
IF = 200 A; Tj = 25 (125) °C2)
IF = 200 A; Tj = 25 (125) °C2)
Thermal Characteristics
Rthjc
per IGBT
Rthjc per inverse/series diode
Rthch
per module
min.
≥ VCES
4,5
–
–
–
–
–
95
–
–
–
–
–
–
–
–
–
–
–
typ.
–
5,5
0,2
12
–
2,5(3,1)
2,8(3,6)
–
–
10
1,5
0,8
–
220
100
600
70
24
17
max.
–
6,5
3
–
1
3(3,7)
–
–
700
13
2
1,2
40
400
200
800
100
–
–
– 2,0(1,8) 2,5
– 2,3(2,1) –
– – 1,2
– 45 70
– 12(16) –
– 1(2,7) –
– 2,0(1,8) 2,5
– 2,25(2,1) –
– – 1,2
– 3 5,5
– 70(105) –
– 10(26) –
– – 0,09
– – 1,5/0,18
– – 0,038
Units
V
V
mA
mA
µA
V
V
S
pF
nF
nF
nF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
mΩ
A
µC
V
V
V
mΩ
A
µC
°C/W
°C/W
°C/W
© by SEMIKRON
0898
SEMITRANS® M
IGBT Modules
SKM 200 GBD 123 D 1S
SEMITRANS 3
GBD
Features
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL
diodes8)
• Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
• Large clearance (13 mm) and
creepage distances (20 mm).
Typical Applications:
• Switching (not for linear use)
• Resonant inverters
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
– diF/dt = 1500 A/µs, VGE = 0 V
3) Use VGEoff = -5 ... -15 V
5) See fig. 2 + 3; RGoff = 5,6 Ω
6) Series diodes have the data of
the inverse diodes of
SKM 300 GB 123 D
8) CAL = Controlled Axial Lifetime
Technology.
9) → B6-156 for protection only
Cases and mech. data → B6-156
Diagrams → B6-150...153 (IGBT)
and B6-172 and B6-173 (D3, D4)
B 6 – 155
1 page  
SKM 200 GA 123 D…
VGE [V]
20
1502Qg3.vpo
18
600V
800V
16
14
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200
QG [nC]
Fig. 13 Typ. gate charge characteristic
1502tic.vpo
tdoff
38
tdon
tr
102
tf
ICpuls = 150 A
C [nF]
100
10
1502C.vpo
VGE = 0 V
f = 1 MHZ
Ciss
1 Coss
Crss
0.1
0
10 20 30
Fig. 14 Typ. capacitances vs.VCE
40
VCE [V]
t [ns]
104
1502trg.vpo
Tj = 125 °C
VCE = 600 V
VGE = + 15 V
RGon = 5,6 Ω
RGoff = 5,6 Ω
induct. load
103
Tj = 125 °C
tdoff VCE = 600 V
VGE = + 15 V
IC = 150 A
induct. load
tdon
tr
9 102 tf
10
0
100 200 300
Fig. 15 Typ. switching times vs. IC
400
IC [A]
Fig. 17 Typ. CAL diode forward characteristic
B 6 – 152
10
0 20 40 5* >6:0@
Fig. 16 Typ. switching times vs. gate resistor RG
P- '&&
'
%M S
'*( [ '
0*%;/6
#*
Ω
Ω
Ω
Ω
30 Ω
(411
,
$
Fig. 18 Diode turn-off energy dissipation per pulse
0898
© by SEMIKRON
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