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PDF BSD235N Data sheet ( Hoja de datos )
| Número de pieza | BSD235N | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSD235N (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSD235N
Product Summary
VDS
RDS(on),max
ID
VGS=4.5 V
VGS=2.5 V
20 V
350 mW
600
0.95 A
PG-SOT-363
65 4
1
23
Type
Package
Tape and Reel Information
BSD235N PG-SOT-363 H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter 1)
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Marking
X6s
Lead Free
Yes
Packing
Non dry
Value
0.95
0.76
3.8
Unit
A
Avalanche energy, single pulse
E AS I D=0.95 A, R GS=16 W
1.6 mJ
Reverse diode dv /dt
dv /dt
I D=0.95 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V GS
P tot T A=25 °C
T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
(1) Remark: only one of both transistors in operation.
6
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.5
page 1
2014-07-29
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
4
4.5 V 3.5 V
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
BSD235N
600
3
3V
2
2.5 V
1
2.3 V
2V
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
500 2.2 V 2.5 V
400
300
3.5 V
200
3V
4.5 V
6V
100
0
3 012
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
3
4
4
0.5
0.25
0
0
Rev 2.5
150 °C
25 °C
2
12
VGS [V]
0
30
page 5
24
ID [A]
6
2014-07-29
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSD235N.PDF ] | |
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