BSD235N 데이터시트 PDF

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OptiMOS™2 Small-Signal-Transistor

Features

• Dual N-channel

• Enhancement mode

• Super Logic level (2.5V rated)

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

BSD235N

Product Summary

VDS

RDS(on),max

ID

VGS=4.5 V

VGS=2.5 V

20 V

350 mW

600

0.95 A

PG-SOT-363

65 4

1

23

Type

Package

Tape and Reel Information

BSD235N PG-SOT-363 H6327: 3000 pcs/ reel

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter 1)

Symbol Conditions

Continuous drain current

Pulsed drain current

ID

I D,pulse

T A=25 °C

T A=70 °C

T A=25 °C

Marking

X6s

Lead Free

Yes

Packing

Non dry

Value

0.95

0.76

3.8

Unit

A

Avalanche energy, single pulse

E AS I D=0.95 A, R GS=16 W

1.6 mJ

Reverse diode dv /dt

dv /dt

I D=0.95 A, V DS=16 V,

di /dt =200 A/µs,

T j,max=150 °C

Gate source voltage

Power dissipation

Operating and storage temperature

V GS

P tot T A=25 °C

T j, T stg

ESD Class

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category; DIN IEC 68-1

(1) Remark: only one of both transistors in operation.

6

±12

0.5

-55 ... 150

0 (<250V)

260 °C

55/150/56

kV/µs

V

W

°C

Rev 2.5

page 1

2014-07-29

1 Power dissipation

P tot=f(T A)

0.5

0.375

0.25

0.125

2 Drain current

I D=f(T A); V GS≥4.5 V

1

0.75

0.5

0.25

BSD235N

0

0 40 80

TA [°C]

3 Safe operating area

I D=f(V DS); T A=25 °C; D =0

parameter: t p

101

120

0

0 40 80 120

TA [°C]

4 Max. transient thermal impedance

Z thJA=f(t p)

parameter: D =t p/T

103

160

100

10-1

10-2

10 µs

100 µs

1 ms

10 ms

DC

0.5

102

0.2

0.1

0.05

0.01

101

single pulse

10-3

10-2

Rev 2.5

10-1 100 101

VDS [V]

100

102 10-5 10-4 10-3 10-2 10-1 100 101 102

tp [s]

page 4

2014-07-29

13 Avalanche characteristics

I AS=f(t AV); R GS=16 W

parameter: T j(start)

101

14 Typ. gate charge

V GS=f(Q gate); I D=0.95 A pulsed

parameter: V DD

7

BSD235N

6

100

10-1

25 °C

100 °C

125 °C

5

4

3

2

10 V

4V

16 V

10-2

100

101 102 103

tAV [µs]

15 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=250 µA

1

0

104 0 0.1 0.2 0.3 0.4 0.5

Qgate [nC]

16 Gate charge waveforms

25

24

23

22

21

20

19

18

17

16

-60 -20 20 60 100 140

Tj [°C]

V GS

V gs(th)

Q g(th)

Q gs

Rev 2.5

page 7

Qg

Q sw

Q gd

Q gate

2014-07-29

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