2N7002DW 데이터시트 PDF

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January 2015

2N7002DW

N-Channel Enhancement Mode Field Effect Transistor

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

SC70-6 (SOT 363)

D2 G1 S1

1

Marking : 2N

Ordering Information

Part Number

2N7002DW

Top Mark

2N

1 S2 G2 D1

Package

SC70 6L

Packing Method

Tape and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

VDSS

VDGR

VGSS

ID

TJ, TSTG

Parameter

Drain-Source Voltage

Drain-Gate Voltage (RGS ≤ 1.0 MΩ)

Gate-Source Voltage

Drain Current

Junction and Storage Temperature Range

Continuous

Pulsed

Continuous

Continuous at 100°C

Pulsed

Value

60

60

±20

±40

115

73

800

-55 to +150

Unit

V

V

V

mA

°C

© 2007 Fairchild Semiconductor Corporation

2N7002DW Rev. 1.2

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

V =0V

GS

100

150oC

25oC

10

-55oC

1

0.0 0.2 0.4 0.6 0.8 1.0

V , Body Diode Forward Voltage [V]

SD

Figure 7. Reverse Drain Current Variation with Diode

Forward Voltage and Temperature

280

240

200

160

120

80

40

0

0 25 50 75 100 125 150 175

T [oC], AMBIENT TEMPERATURE

a

Figure 8. Power Derating

© 2007 Fairchild Semiconductor Corporation

2N7002DW Rev. 1.2

4

www.fairchildsemi.com

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