2N7002DW 데이터시트 PDF

2N7002DW 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.

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OptiMOS™ Small-Signal-Transistor

Features

• Dual N-channel

• Enhancement mode

• Logic level

• Avalanche rated

• Fast switching

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

2N7002DW

Product Summary

VDS

RDS(on),max

ID

VGS=10 V

VGS=4.5 V

60 V

3W

4

0.3 A

PG-SOT363

65

4

1

2

3

Type

Package Tape and Reel Information

2N7002DW PG-SOT363 H6327: 3000 pcs/reel

Marking

X8s

HalogenFree Packing

Yes Non Dry

Parameter 1)

Continuous drain current

Pulsed drain current

Symbol Conditions

I D T A=25 °C

T A=70 °C

I D,pulse T A=25 °C

Value

0.30

0.24

1.2

Unit

A

Avalanche energy, single pulse

E AS I D=0.3 A, R GS=25 W

Reverse diode dv /dt

Gate source voltage

dv /dt

V GS

I D=0.3 A, V DS=48 V,

di /dt =200 A/µs,

T j,max=150 °C

ESD class

JESD22-A114 (HBM)

Power dissipation

P tot T A=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

1) Remark: one of both transistors in operation.

1.3 mJ

6

±20

class 0 (<250V)

0.5

-55 ... 150

55/150/56

kV/µs

V

W

°C

Rev.2.3

page 1

2014-09-19

1 Power dissipation

P tot=f(T A)

2 Drain current

I D=f(T A); V GS≥10 V

2N7002DW

0.5

0.4

0.3

0.2

0.1

0

0 40 80

TA [°C]

3 Safe operating area

I D=f(V DS); T A=25 °C; D =0

parameter: t p

101

120

0.35

0.3

0.25

0.2

0.15

0.1

0.05

0

160 0 40 80 120

TA [°C]

4 Max. transient thermal impedance

Z thJA=f(t p)

parameter: D =t p/T

103

limited by on-state

resistance

100

10-1

10-2

1 µs

10 µs

100 µs

1 ms

10 ms

DC

0.5

102

0.2

0.1 0.05

0.02

0.01

101

single pulse

160

10-3

1

Rev.2.3

10

VDS [V]

100

100 10-5 10-4 10-3 10-2 10-1 100 101 102 103

tp [s]

page 4

2014-09-19

13Avalanche characteristics

I AS =f(t AV ); R GS =25 Ω

parameter: TJ(start)

100

10-1

10-2

125 °C

100 °C

25 °C

10-3

100 101 102

tAV [µs]

15 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=250 µA

14 Typ. gate charge

V GS=f(Q gate); I D=0.5 A pulsed

parameter: V DD

10

9

8

30 V

7

12 V

6 48 V

5

4

3

103 2

1

0

0 0.1 0.2 0.3

Qgate [nC]

2N7002DW

0.4 0.5

70

65

60

55

50

-40 0 40 80 120 160

Tj [°C]

Rev.2.3

page 7

2014-09-19

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