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PDF BSD235C Data sheet ( Hoja de datos )
| Número de pieza | BSD235C | |
| Descripción | Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSD235C (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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BSD235C
OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor
Features
· Complementary P + N channel
· Enhancement mode
· Super Logic level (2.5V rated)
· Avalanche rated
· Qualified according to AEC Q101
Product Summary
VDS
RDS(on),max
ID
VGS=±4.5 V
VGS=±2.5 V
PN
-20 20 V
1200 350 mW
2100 600
-0.53 0.95 A
· 100% lead-free; RoHS compliant
· Halogen-free according to IEC61249-2-21
PG-SOT-363
6 54
1
2
3
Type
Package
Tape and Reel Information
BSD235C PG-SOT-363 H6327: 3000 pcs / reel
Marking
X9s
Lead Free
Yes
Packing
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Symbol Conditions
Continuous drain current
I D T A=25 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T A=70 °C
T A=25 °C
P: I D=-0.53 A,
N: I D=0.95 A,
R GS=25 W
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
ESD class
JESD22-A114-HBM
Soldering temperature
T solder
IEC climatic category; DIN IEC 68-1
1) Remark: only one of both transistors active
Value
PN
-0.53
0.95
-0.46
0.76
-2.1 3.8
Unit
A
1.4 1.6 mJ
±12
0.5
-55 ... 150
0 (<250V)
260
55/150/56
V
W
°C
°C
°C
Rev.2.4
page 1
2015-10-08
1 page  
1 Power dissipation (P)
P tot=f(T A)
2 Power dissipation (N)
P tot=f(T A)
BSD235C
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0
0 40
3 Drain current (P)
I D=f(T A)
parameter: V GS≤-4.5 V
1
80
TA [°C]
120
0
160 0 40
4 Drain current (N)
I D=f(T A)
parameter: V GS≥4.5 V
1
80
TA [°C]
120
160
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2
0
0
Rev.2.4
40 80 120
TA [°C]
0
160 0
page 5
40 80 120
TA [°C]
160
2015-10-08
5 Page 
25 Typ. gate charge (P)
V GS=f(Q gate); I D=-0.53 A pulsed
parameter: V DD
6
26 Typ. gate charge (N)
V GS=f(Q gate); I D=0.95 A pulsed
parameter: V DD
6
BSD235C
55
4
-10 V
-4 V
10 V
4
4V
16 V
-16 V
33
22
11
0
0 0.1 0.2 0.3 0.4 0.5
-Qgate [nC]
27 Drain-source breakdown voltage (P)
V BR(DSS)=f(T j); I D=-250 µA
0
0.6 0 0.1 0.2 0.3 0.4 0.5
Qgate [nC]
28 Drain-source breakdown voltage (N)
V BR(DSS)=f(T j); I D=250 µA
0.6
25
24
23
22
21
20
19
18
17
16
-60
-20
20
60 100 140 180
Tj [°C]
25
24
23
22
21
20
19
18
17
16
-60 -20 20
60 100 140
Tj [°C]
Rev.2.4
page 11
2015-10-08
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BSD235C.PDF ] | |
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