BSD235C 데이터시트 PDF

BSD235C 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.

미리보기를 사용할 수 없습니다

BSD235C

OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor

Features

· Complementary P + N channel

· Enhancement mode

· Super Logic level (2.5V rated)

· Avalanche rated

· Qualified according to AEC Q101

Product Summary

VDS

RDS(on),max

ID

VGS=±4.5 V

VGS=±2.5 V

PN

-20 20 V

1200 350 mW

2100 600

-0.53 0.95 A

· 100% lead-free; RoHS compliant

· Halogen-free according to IEC61249-2-21

PG-SOT-363

6 54

1

2

3

Type

Package

Tape and Reel Information

BSD235C PG-SOT-363 H6327: 3000 pcs / reel

Marking

X9s

Lead Free

Yes

Packing

Non dry

Maximum ratings, at T j=25 °C, unless otherwise specified 1)

Parameter

Symbol Conditions

Continuous drain current

I D T A=25 °C

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

I D,pulse

E AS

V GS

T A=70 °C

T A=25 °C

P: I D=-0.53 A,

N: I D=0.95 A,

R GS=25 W

Power dissipation

P tot T A=25 °C

Operating and storage temperature T j, T stg

ESD class

JESD22-A114-HBM

Soldering temperature

T solder

IEC climatic category; DIN IEC 68-1

1) Remark: only one of both transistors active

Value

PN

-0.53

0.95

-0.46

0.76

-2.1 3.8

Unit

A

1.4 1.6 mJ

±12

0.5

-55 ... 150

0 (<250V)

260

55/150/56

V

W

°C

°C

°C

Rev.2.4

page 1

2015-10-08

Parameter

Symbol Conditions

BSD235C

min.

Values

typ.

Unit

max.

Reverse Diode

Diode continuous forward current P I S

Diode pulse current

N

P I S,pulse

T C=25 °C

N

Diode forward voltage

P V SD

V GS=0 V, I F=-0.53 A,

T j=25 °C

Reverse recovery time

Reverse recovery charge

N

P t rr

N

P Q rr

N

V GS=0 V, I F=0.95 A,

T j=25 °C

V R=±10 V, I F=I S,

di F/dt =100 A/µs

-

-

-

-

-

-

-

-

-

- -0.42 A

0.5

- -2.1

- 3.8

-1 -1.2 V

0.9 1.1

7.6 - ns

5.2 -

1.1 - nC

0.97 -

Rev.2.4

page 4

2015-10-08

9 Typ. output characteristics (P)

I D=f(V DS); T j=25 °C

parameter: V GS

5

10 Typ. output characteristics (N)

I D=f(V DS); T j=25 °C

parameter: V GS

5

BSD235C

4

10 V

4.5 V

3

3.5 V

2

4.5 V

4

10 V

3 3.5 V

3V

2

3V

1

2.5 V

2.3 V

2V

1.8 V

0

012345

VDS [V]

2.5 V

1

2.3 V

2V

1.8 V

0

012345

VDS [V]

11 Typ. drain-source on resistance (P)

R DS(on)=f(I D); T j=25 °C

parameter: V GS

2000

12 Typ. drain-source on resistance (N)

R DS(on)=f(I D); T j=25 °C

parameter: V GS

700

1800

2.2 V

1600

2.5 V

1400

1200

1000

800

600

400

200

3.3 V 3.5 V

3V

4.5 V

10 V

600 2.2 V

500

2.5 V

400

300

200

100

3V

3.3 V

3.5 V

4.5 V

10 V

0

01234

ID [A]

0

01234

ID [A]

Rev.2.4

page 7

2015-10-08

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.