|
|
|
부품번호 | AM2300 기능 |
|
|
기능 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | AiT Semiconductor | ||
로고 | |||
전체 8 페이지수
AiT Semiconductor Inc.
www.ait-ic.com
AM2300
MOSFET
20V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2300 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. Advanced trench technology to
provide excellent RDS(ON).
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, and
low in-line power loss are needed in a very small
outline surface mount package.
20V/4.0A, RDS(ON) =26mΩ(typ.)@VGS =4.5V
20V/3.0A, RDS(ON) =31mΩ(typ.)@VGS =2.5V
20V/2.0A, RDS(ON) =44mΩ(typ.)@VGS =1.8V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
Available in SOT-23 Package
APPLICATION
AM2300 is available in SOT-23 packages.
ORDER INFORMATION
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Package Type
Part Number
SOT-23
AM2300E3R
E3
AM2300E3VR
Note
V: Green Package
R : Tape & Reel
AiT provides all Pb free products
Suffix “ V “ means Green Package
PIN CONFIGURATION
REV1.0
- JUN 2010 RELEASED -
-1-
AiT Semiconductor Inc.
www.ait-ic.com
AM2300
MOSFET
20V N-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TA = 25℃ Unless otherwise specified
Parameter
Symbol
Conditions
Static Parameters
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250μA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Gate Leakage Current
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V
TJ=55°C
On-State Drain Current
ID(ON)
VDS≧5V,VGS=4.5V
VGS=4.5V,ID=4.0A
Drain-source On-Resistance
RDS(ON)
VGS=2.5V,ID=3.0A
VGS=1.8V,ID=2.0A
Source-Drain Doide
Diode Forward Voltage
VSD IS=1A,VGS=0V
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Qg VDS=10V
Qgs VGS=4.5V
Gate-Drain Charge
Qgd ID=5.5A
Input Capacitance
CISS
VDS=10V
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
VGS=0V
f=1MHz
Turn-On Time
td(on)
tr
VDD=10V
RL=10Ω
td(off)
ID=1.0A
Turn-Off Time
VGEN=4.5V
tf
RG=6Ω
Note : 1. Pulse test: pulse width <= 300us, duty cycle<= 2%
2. Static parameters are based on package level with recommended wire-bonding
MIN TYP MAX Unit
20 -
-V
0.4 - 1.0 V
- - ±100 nA
-1
μA
- - 10
5 - -A
- 26 30
- 31 38 mΩ
- 44 55
- 0.7 1.2 V
- 6.5 -
- 0.7 - nC
- 2.8 -
- 440 -
- 110 - pF
- 90 -
- 6 10
- 15 28
- 26 48 nS
- 16 28
REV1.0
- JUN 2010 RELEASED -
-4-
4페이지 AiT Semiconductor Inc.
www.ait-ic.com
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm)
AM2300
MOSFET
20V N-CHANNEL ENHANCEMENT MODE
Symbol
A
B
C
D
E
F
G
H
J
K
Min
2.800
2.100
1.200
0.890
1.780
0.450
0.013
0.890
0.085
0.370
Max
3.040
2.640
1.400
1.030
2.050
0.600
0.100
1.120
0.180
0.510
Tape Dimension
Tape & Reel Dimension
REV1.0
- JUN 2010 RELEASED -
-7-
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ AM2300.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AM2300 | N-Channel Enhancement Mode MOSFET | AXElite |
AM2300 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | AiT Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |