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HFB1N60 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 HFB1N60
기능 N-Channel MOSFET
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HFB1N60 데이터시트, 핀배열, 회로
Nov 2007
HFB1N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 0.4 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 4.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-92
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚
– Continuous (TC = 100ఁ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
0.4
0.25
1.6
ρ30
50
0.4
0.3
5.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
1.0
3.0
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
RșJL
RșJA
Junction-to-Lead
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
40
120
Units
ఁ͠Έ
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HFB1N60 pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
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HFB1N60 전자부품, 판매, 대치품
Package Dimension
0.46±0.1
{vT`Y
4.58±0.25
3.71±0.2
1.27typ
1.27typ
3.6±0.25
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