Datasheet.kr   

HFC1N60 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 HFC1N60
기능 N-Channel MOSFET
제조업체 SemiHow
로고 SemiHow 로고 


전체 8 페이지

		

No Preview Available !

HFC1N60 데이터시트, 핀배열, 회로
Sep 2006
HFC1N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 0.5 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 4.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-126
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
0.5 *
0.35 *
2.0 *
ρ30
50
0.5
0.75
5.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
7.5
0.06
-55 to +150
300
* Drain current limited by junction temperature
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
17
62.5
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͧ͑͡͡




HFC1N60 pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
101
Operation in This Area
is Limited by R DS(on)
100 100 Ps
1 ms
DC 10 ms
10-1
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
vs Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25 50 75 100 125
TC, Case Temperature [ 䉝㼉
Figure 10. Maximum Drain Current
vs Case Temperature
150
101 D=0.5
0.2
0.1
100 0.05
0.02
0.01
10-1
single pulse
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 17 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
PDM
10-2
10-5
t1
t2
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
102
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͧ͑͡͡

4페이지










HFC1N60 전자부품, 판매, 대치품
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• IS controlled by pulse period
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͧ͑͡͡

7페이지



구       성총 8 페이지
다운로드[ HFC1N60.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
HFC1N60

N-Channel MOSFET

SemiHow
SemiHow

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵