Datasheet.kr   

HFB1N60S PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 HFB1N60S
기능 N-Channel MOSFET
제조업체 SemiHow
로고 SemiHow 로고 



전체 8 페이지

		

No Preview Available !

HFB1N60S 데이터시트, 핀배열, 회로
Sep 2009
HFB1N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 0.3 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 3.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-92
1
2
3
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
0.3
0.18
1.2
ρ30
33
0.3
0.3
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25)
Power Dissipation (TL = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
0.9
2.5
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
RșJL
RșJA
Parameter
Junction-to-Lead
Junction-to-Ambient
Typ.
--
--
Max.
50
140
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡




HFB1N60S pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. V = 10 V
GS
2. ID = 0.15 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
0.3
0.2
0.1
0.0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡

4페이지










HFB1N60S 전자부품, 판매, 대치품
Package Dimension
0.46±0.1
{vT`YG
4.58±0.25
3.71±0.2
1.27typ
1.27typ
3.6±0.25
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡

7페이지



구       성총 8 페이지
다운로드[ HFB1N60S.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
HFB1N60

N-Channel MOSFET

SemiHow
SemiHow
HFB1N60S

N-Channel MOSFET

SemiHow
SemiHow

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵