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HFB1N70 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 HFB1N70
기능 N-Channel MOSFET
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HFB1N70 데이터시트, 핀배열, 회로
Jan 2007
HFB1N70
700V N-Channel MOSFET
BVDSS = 700 V
RDS(on) typ = 10.3
ID = 0.3 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 4.5 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 10.3 (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-92
1
23
1.Gate 2. Drain 3. Source
D
G
S
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
0.3
0.18
1.2
±30
33
0.3
0.25
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
0.02
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RθJL
RθJA
Junction-to-Lead
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
50
140
Units
℃/W
◎ SEMIHOW REV.A0,Apr 2006




HFB1N70 pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
* Note :
1. VGS = 0 V
2. ID = 250μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
100 100 μs
1 ms
10 ms
100 ms
10-1
100
DC * Notes :
1. T = 25 oC
C
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Note :
1. VGS = 10 V
2. ID = 0.15 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
0.4
0.3
0.2
0.1
0.0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
102
D =0.5
101 0.2
0 .1
0 .0 5
100 0.02
0 .0 1
sing le pu lse
PDM
* N otes :
1. Z θJC(t) = 50 oC /W M ax.
2. D uty F actor, D = t1/t2
3. T - T = P * Z (t)
JM C
DM θJC
t1t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
Figure
1t11 ,.
S q u a re W a ve P u lse
Transient Thermal
D u ra tio n [se c]
Response Curve
103
◎ SEMIHOW REV.A0,Apr 2006

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HFB1N70 전자부품, 판매, 대치품
Package Dimension
0.46±0.1
TO-92
4.58±0.25
3.71±0.2
1.27typ
1.27typ
3.6±0.25
◎ SEMIHOW REV.A0,Apr 2006

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