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HFC1N70 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 HFC1N70
기능 N-Channel MOSFET
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HFC1N70 데이터시트, 핀배열, 회로
Dec 2008
HFC1N70
700V N-Channel MOSFET
BVDSS = 700 V
RDS(on) typ = 14.0 Ω
ID = 0.5 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 4.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 14.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
TO-126
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
700
0.5
0.35
2.0
±30
33
0.5
0.75
5.5
7.5
0.06
-55 to +150
300
* Drain current limited by junction temperature
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
17
62.5
Units
℃/W
SEMIHOW REV.A0,Dec 2008




HFC1N70 pdf, 반도체, 판매, 대치품
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
* Note :
1. VGS = 0 V
2. ID = 250µA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
101
Operation in This Area
is Limited by R DS(on)
100 µs
100
1 ms
10 ms
100 ms
10-1
10-2
100
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Note :
1. VGS = 10 V
2. ID = 0.3 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
0.5
0.4
0.3
0.2
0.1
0.0
25 50 75 100 125 150
T , Case Temperature [oC]
C
Figure 10. Maximum Drain Current
vs Case Temperature
101 D=0.5
0.2
0.1
100 0.05
0.02
0.01
10-1
single pulse
Notes :
1. Zθ JC(t) = 17 /W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
PDM
10-2
10-5
t1
t2
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
102
Figure 11. Transient Thermal Response Curve
SEMIHOW REV.A0,Dec 2008

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HFC1N70 전자부품, 판매, 대치품
Package Dimension
TO-126
8.5max
φ3.2±0.2
2.8max
1.2±0.2
2.3max
2.3max
0.78±0.08
1.27typ
0.5±0.1
SEMIHOW REV.A0,Dec 2008

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