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85N3LH5 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 85N3LH5
기능 STD85N3LH5
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85N3LH5 데이터시트, 핀배열, 회로
STD85N3LH5
STP85N3LH5 - STU85N3LH5
N-channel 30 V, 0.0042 , 80 A, DPAK, TO-220, IPAK
STripFET™ V Power MOSFET
Features
www.DataSheet4U.com Type
STD85N3LH5
STP85N3LH5
STU85N3LH5
VDSS
30 V
30 V
30 V
RDS(on) max
< 0.005
< 0.0054
< 0.0054
ID
80 A
80 A
80 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD85N3LH5
STP85N3LH5
STU85N3LH5
Marking
85N3LH5
85N3LH5
85N3LH5
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2008
Rev 5
1/16
www.st.com
16




85N3LH5 pdf, 반도체, 판매, 대치품
Electrical characteristics
STD85N3LH5 - STP85N3LH5 - STU85N3LH5
2 Electrical characteristics
www.DataSheet4U.com
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 20 V
VDS = 20 V,Tc = 125 °C
VGS = ± 22 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
SMD version
VGS = 10 V, ID = 40 A
VGS = 5 V, ID = 40 A
SMD version
VGS = 5 V, ID = 40 A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1 2.5 V
0.042 0.005
0.0046 0.0054
0.0052 0.0065
0.0058 0.0071
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qgs1
Qgs2
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
RG Gate input resistance
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
VDD = 15 V, ID = 80 A
VGS = 5 V
(see Figure 16)
VDD = 15 V, ID = 80 A
VGS = 5 V
(see Figure 19)
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
1850
380
58
pF
pF
pF
14 nC
6.8 nC
4.7 nC
2.3 nC
4.5 nC
1.2
4/16

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85N3LH5 전자부품, 판매, 대치품
STD85N3LH5 - STP85N3LH5 - STU85N3LH5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
www.DataSheet4U.com
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
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85N3LH5

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