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PDF MT4S200U Data sheet ( Hoja de datos )
| Número de pieza | MT4S200U | |
| Descripción | SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE TRANSISTOR | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MT4S200U (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MT4S200U
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT4S200U
UHF-SHF Low Noise Amplifier Application
Unit: mm
FEATURES
• Low Noise Figure :NF=1.7dB (@f=5.8GHz)
• High Gain:|S21e|2=9.5dB (@f=5.8GHz)
Marking
4
3
P２
12
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
VCBO
VCEO
VEBO
IC
IB
Pc
8V
4V
1.2 V
35 mA
5 mA
100 mW
Collector Power dissipation
PC(Note1)
140
mW
Junction temperature
Tj 150 °C
Storage temperature Range
Tstg
−55~150
°C
Note1 : Ta=25degC (When mounted on a 1.6mm(t) glass epoxy PCB)
USQ
1.Collector
2.Emitter
3.Base
4.Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-2K1E
Weight: 0.006 g (typ.)
1 2006-12-26
1 page  
Output Power vs Input Power
15
10
5
0
-5
-10
-15
-30
VCE=3v
Ic=15mA
f=2GHz
Zs=ZL=50ohm
-20 -10 0 10
Input Power [dB(mW)]
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-40
IM3 (2GHz)
Pout
IM3
VCE=3v,Ic=15mA
f=2GHz,2.001GHz
-30 -20 -10 0 10
Input Power [dB(mW)]
MT4S200U
Output Power vs Input Power
15
10
5
0
-5
-10
-15
-20
VCE=3v
Ic=15mA
f=5.8GHz
Zs=ZL=50ohm
-10 0 10
Input Power [dB(mW)]
IM3 (5.8GHz)
30
20
10
0 Pout
-10
-20
-30
IM3
-40
-50
-60
-70
VCE=3v,Ic=15mA
f=5.8GHz,5.801GHz
-80
-30 -20 -10 0 10 20
Input Power [dB(mW)]
5 2006-12-26
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MT4S200U.PDF ] | |
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