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PDF 2SC1162 Data sheet ( Hoja de datos )
| Número de pieza | 2SC1162 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
2SC1162
2.5A , 35V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier
TO-126
CLASSIFICATION OF hFE (1)
Product-Rank 2SC1162-B 2SC1162-C
Range
60~120
100~200
2SC1162-D
160~320
Collector
Base
Emitter
Emitter
Collector
Base
A
E
F
N
L
M
K
B
H
J
C
D
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
35
35
5
2.5
750
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
35
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
35
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=1mA, IC=0
Collector Cut – Off Current
ICBO - - 20 μA VCB=35V, IE=0
Emitter Cut – Off Current
IEBO - - 20 μA VEB=5V, IC=0
DC Current Gain
hFE (1) 60 - 320
hFE (2) 20 -
-
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A*
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
1 V IC=2A, IB=200mA
Transition Frequency
fT - 180 - MHz VCE=2V, IC=200mA
Collector Output Capacitance
VBE - - 1.5 V VCE=2V, IC=1.5A
*Pulse test
http://www.SeCoSGmbH.com/
07-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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