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PDF HT48F50E Data sheet ( Hoja de datos )

Número de pieza HT48F50E
Descripción I/O Flash Type MCU
Fabricantes Holtek Semiconductor 
Logotipo Holtek Semiconductor Logotipo



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No Preview Available ! HT48F50E Hoja de datos, Descripción, Manual

HT48F50E
I/O Flash Type MCU with EEPROM
Technical Document
· Tools Information
· FAQs
· Application Note
- HA0075E MCU Reset and Oscillator Circuits Application Note
Features
· Operating voltage:
fSYS=4MHz: 2.2V~5.5V
fSYS=8MHz: 3.3V~5.5V
fSYS=12MHz: 4.5V~5.5V
· Multi-programmable Flash Type Program Memory:
4096´15
· EEPROM Data Memory:256´8
· RAM Data Memory:160´8
· Max. 33 bidirectional I/O with Pull-high Options
· External Interrupt Input shared with an I/O line
· An 8-bit programmable Timer/Event Counter with
overflow interrupt and 8-stage perscaler
· A 16-bit programmable Timer/Event Counter with
overflow interrupt
· Two Timer External Inputs
· Crystal and RC System Oscillator
· Watchdog Timer Function
· PFD/Buzzer Driver Outputs
· Power Down and Wake-up Feature for Power Saving
Operation
· Up to 0.5ms instruction cycle with 8MHz system clock
at VDD=5V
· 6-level subroutine nesting
· Bit Manipulation Instructions
· Table Read Function
· 63 Powerful Instructions
· All Instructions executed in 1 or 2 Machine Cycles
· Low Voltage Reset Function
· Full Suite of Supported Hardware and Software
Tools Available
· Flash program memory can be re-programmed up to
100,000 times
· Flash program memory data retention > 10 years
· EEPROM data memory can be re-programmed up to
1,000,000 times
· EEPROM data memory data retention > 10 years
· ISP (In-System Programming) interface
· 28-pin SKDIP/SOP/SSOP, 48-pin SSOP package
General Description
The HT48F50E is an 8-bit high-performance, RISC ar-
chitecture microcontroller devices specifically designed
for multiple I/O control product applications. Device flex-
ibility is enhanced with their internal special features
such as power-down and wake-up functions, oscillator
options, buzzer driver, etc. These features combine to
ensure applications require a minimum of external com-
ponents and therefore reduce overall product costs.
Having the advantages of low-power consumption,
high-performance, I/O flexibility as well as low-cost,
these devices have the versatility to suit a wide range of
application possibilities such as industrial control, con-
sumer products, subsystem controllers, etc.
The device utilises a Flash type Program Memory, and
therefore have multi-programmable capabilities offering
the advantages of easy and efficient program updates.
The non-volatile internal EEPROM also offers the capa-
bility of storing information such as product part num-
bers, calibration data and other specific product
information. etc. The device is fully supported by the
Holtek range of fully functional development and pro-
gramming tools, providing a means for fast and efficient
product development cycles.
Rev. 1.50
1 July 28, 2009

1 page




HT48F50E pdf
HT48F50E
Symbol
Parameter
tWDT1
tWDT2
tRES
tSST
tLVR
tINT
Watchdog Time-out Period
(WDT Internal Clock Source)
Watchdog Time-out Period
(Instruction Clock Source)
External Reset Low Pulse Width
System Start-up Timer Period
Low Voltage Reset Time
Interrupt Pulse Width
Test Conditions
VDD Conditions
3V
Without WDT prescaler
5V
¾ Without WDT prescaler
¾¾
¾ Wake-up from HALT
¾¾
¾¾
Min.
11
8
¾
1
¾
1
1
Note: *tSYS=1/fSYS
Typ.
23
17
1024
¾
1024
¾
¾
Max.
46
33
¾
¾
¾
2
¾
Unit
ms
ms
*tSYS
ms
*tSYS
ms
ms
EEPROM - A.C. Characteristics
Symbol
Parameter
fSK
tSKH
tSKL
tCSS
tCSH
tCDS
tDIS
tDIH
tPD1
tPD0
tSV
tPR
Clock Frequency
SK High Time
SK Low Time
CS Setup Time
CS Hold Time
CS Deselect Time
DI Setup Time
DI Hold Time
DO Delay to ²1²
DO Delay to ²0²
Status Valid Time
Write Cycle Time
VCC=5V±10%
Min.
Max.
02
250 ¾
250 ¾
50 ¾
0¾
250 ¾
100 ¾
100 ¾
¾ 250
¾ 250
¾ 250
¾5
VCC=2.2V±10%
Min.
Max.
01
500 ¾
500 ¾
100 ¾
0¾
250 ¾
200 ¾
200 ¾
¾ 500
¾ 500
¾ 250
¾5
Ta=25°C
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Rev. 1.50
5 July 28, 2009

5 Page





HT48F50E arduino
H T48F50E
00H
S p e c ia l P u r p o s e
D a ta M e m o ry
1FH
20H
50H
60H
G e n e ra l P u rp o s e
D a ta M e m o ry
(1 6 0 B y te s )
FFH
: U n u s e d , re a d a s "0 0 "
Bank 0 RAM Data Memory Structure
Bank 1 of the RAM Data Memory contains only one spe-
cial function register, known as the EECR register,
which is used for EEPROM control and located at ad-
dress ²40H² for all devices.
40H E E C R
Bank 1 RAM Data Memory Structure
Note:
Most of the RAM Data Memory bits can be di-
rectly manipulated using the ²SET [m].i² and
²CLR [m].i² instructions with the exception of a
few dedicated bits. The RAM Data Memory can
also be accessed through the Memory Pointer
registers MP0 and MP1.
General Purpose Data Memory
All microcontroller programs require an area of
read/write memory where temporary data can be stored
and retrieved for use later. It is this area of RAM memory
that is known as General Purpose Data Memory. This
area of Data Memory is fully accessible by the user pro-
gram for both read and write operations. By using the
²SET [m].i² and ²CLR [m].i² instructions individual bits
can be set or reset under program control giving the
user a large range of flexibility for bit manipulation in the
Data Memory.
HT48F50E
Special Purpose Data Memory
This area of Data Memory, is located in Bank 0, where
registers, necessary for the correct operation of the
microcontroller, are stored. Most of the registers are
both readable and writable but some are protected and
are readable only, the details of which are located under
the relevant Special Function Register section. Note
that for locations that are unused, any read instruction to
these addresses will return the value ²00H². Although
the Special Purpose Data Memory registers are located
in Bank 0, they will still be accessible even if the Bank
Pointer has selected Bank 1.
H T48F50E
0 0 H IA R 0
01H M P 0
0 2 H IA R 1
03H M P 1
04H B P
05H A C C
06H P C L
07H TB LP
08H TB LH
09H W D TS
0A H S TA TU S
0 B H IN T C
0C H
0D H TM R 0
0E H TM R 0C
0FH TM R 1H
10H TM R 1L
11H TM R 1C
12H P A
13H P A C
14H P B
15H P B C
16H P C
17H P C C
18H P D
19H P D C
1A H
1B H
1C H
1D H
1E H P G
1FH P G C
20H
5FH
6 0 H G e n e ra l P u rp o s e
D a ta M e m o ry
F F H (1 6 0 B y te s )
: U n u s e d , re a d a s "0 0 "
Special Purpose Data Memory Structure
Rev. 1.50
11 July 28, 2009

11 Page







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