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6R190C6 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 6R190C6
기능 MOSFET
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6R190C6 데이터시트, 핀배열, 회로
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor
IPx60R190C6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket




6R190C6 pdf, 반도체, 판매, 대치품
600V CoolMOSTM C6 Power Transistor
IPx60R190C6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse
Symbol
ID
ID,pulse
EAS
Values
Min. Typ. Max.
- - 20.2
12.8
- - 59
- - 418
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
EAR
IAR
dv/dt
VGS
-
-
-
- 20
- 30
Power dissipation for
TO-220, TO-247, TO-262, TO-263
Power dissipation for
TO-220 FullPAK
Ptot
Ptot
-
-
Operating and storage temperature
Mounting torque
TO-220, TO-247
Tj,Tstg
- 55
-
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Maximum diode
commutation speed3)
IS
IS,pulse
dv/dt
dif/dt
-
-
-
-
Insulation withstand voltage VISO -
TO-220 FullPAK
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse widthtp limited by Tj,max
3) Identical low side and high side switch with identical RG
-
-
-
-
-
-
-
-
-
-
-
-
-
0.63
3.4
50
20
30
151
34
150
60
50
17.5
59
15
500
2500
Unit Note / Test Condition
A TC= 25 °C
TC= 100°C
A TC=25 °C
mJ ID=3.4 A,VDD=50 V
(see table 21)
ID=3.4 A,VDD=50 V
A
V/ns VDS=0...480 V
V static
AC (f>1 Hz)
W TC=25 °C
°C
Ncm M3 and M3.5 screws
M2.5 screws
A TC=25 °C
A TC=25 °C
V/ns VDS=0...400 V,ISD& ID,
A/µs Tj=25 °C
(see table 22)
V VRMS, TC =25 °C, t = 1 min
Final Data Sheet
4 Rev. 2.2, 2014-12-02

4페이지










6R190C6 전자부품, 판매, 대치품
600V CoolMOS" C6 Power Transistor
IPx60R190C6
Electrical characteristics
Table 8 Gate charge characteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Table 9 Reverse diode characteristics
Parameter
Symbol
Diode forward voltage
VSD
Min.
-
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
Qrr
Irrm
-
-
-
Values
Typ.
7.6
32
63
5.4
Max.
-
-
-
-
Values
Typ.
0.9
Max.
-
430 -
6.9 -
30 -
Unit
nC
Note /
Test Condition
VDD=480 V, ID=9.5A,
VGS=0 to 10 V
V
Unit
V
ns
µC
A
Note /
Test Condition
VGS=0 V, IF=9.5A,
Tj=25 °C
VR=400 V, IF=9.5A,
diF/dt=100 A/µs
(see table 22)
Final Data Sheet
7 Rev. 2.2, 2014-12-02

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6R190C6

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