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DMG6601LVT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DMG6601LVT
기능 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMG6601LVT 데이터시트, 핀배열, 회로
DMG6601LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
RDS(ON) max
Package
Q1 30V 55m@ VGS = 10V TSOT26
65m@ VGS = 4.5V TSOT26
Q2 -30V 110m@ VGS = -10V TSOT26
142m@ VGS = -4.5V TSOT26
ID max
TA = +25°C
3.8A
3.6A
-2.5A
-2.1A
Features
Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
TSOT26
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.008 grams (approximate)
D1
Q1
D2
Q2
G1 1
6 D1
S2 2
G2 3
5 S1
4 D2
G1
G2
Top View
Top View
S1
N-Channel
S2
P-Channel
Device Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMG6601LVT-7
Case
TSOT26
Packaging
3K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
66G
66G = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 9
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2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
August 2013
© Diodes Incorporated




DMG6601LVT pdf, 반도체, 판매, 대치품
DMG6601LVT
0.08
0.07
0.06
0.05
0.04
0.03
VGS = 2.5V
VGS = 4.5V
VGS = 10V
0.02
0.01
0
0 5 10 15 20
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.10
0.09
0.08
VGS = 4.5V
TA = 150°C
0.07
0.06
0.05
TA = 125°C
TA = 85°C
0.04
0.03
0.02
TA = 25°C
TA = -55°C
0.01
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
VGS = 4.5V
ID = 5A
VGS = 10V
ID = 10A
0.01
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 On-Resistance Variation with Temperature
0.08
0.07
0.06
0.05
0.04
0.03
ID = 2A
0.02
0.01
0
2 3 4 5 6 7 8 9 10
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.8
VGS = 10V
1.6 ID = 10A
1.4 VGS = 4.5V
ID = 5A
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
1.6
1.4
1.2
1.0 ID = 1mA
0.8 ID = 250µA
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
4 of 9
www.diodes.com
August 2013
© Diodes Incorporated

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DMG6601LVT 전자부품, 판매, 대치품
0.16
0.12
0.08
0.04
VGS = -4.5V
ID = -5A
VGS = -10V
ID = -10A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 19 On-Resistance Variation with Temperature
10
8
6
4
TA= 150C
2
TA= 125C
TA= 85C
TA= 25C
TA= -55C
0
0 0.3 0.6 0.9 1.2 1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 21 Diode Forward Voltage vs. Current
10
8
6
VDS = -15V
ID = -2.3A
4
2
0
0 2 4 6 8 10 12 14
Qg, TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics
DMG6601LVT
1.6
1.4
1.2
1.0
-ID = 1mA
0.8
0.6 -ID = 250µA
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 20 Gate Threshold Variation vs. Ambient Temperature
1,000
f = 1MHz
Ciss
100
Coss
Crss
10
0 5 10 15 20 25 30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Junction Capacitance
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
7 of 9
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August 2013
© Diodes Incorporated

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DMG6601LVT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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