CEB15A03 데이터시트 PDF

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CEP15A03/CEB15A03

N-Channel Enhancement Mode Field Effect Transistor

PRELIMINARY

FEATURES

30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

D

D

G

S

CEB SERIES

TO-263(DD-PAK)

G

D

S

CEP SERIES

TO-220

G

S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

VDS 30

VGS ±20

Drain Current-Continuous

Drain Current-Pulsed a

ID 190

IDM 760

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

PD

200

1.3

Single Pulsed Avalanche Energy d

Single Pulsed Avalanche Current d

Operating and Store Temperature Range

EAS

IAS

TJ,Tstg

405

52

-55 to 175

Units

V

V

A

A

W

W/ C

mJ

A

C

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Symbol

RθJC

RθJA

Limit

0.75

62.5

Units

C/W

C/W

This is preliminary information on a new product in development now .

Details are subject to change without notice .

1

Rev 2. 2010.June

http://www.cet-mos.com

CEP15A03/CEB15A03

10 VDS=32V

ID=70A

8

6

4

2

0

0 30 60 90 120

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

VDD

VIN RL

D VOUT

VGS

RGEN G

S

103 RDS(ON)Limit

102

101

100ms

1ms

10ms

DC

TC=25 C

TJ=175 C

100 Single Pulse

10-1

100

101

102

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

td(on)

VOUT

t on

tr

td(off)

90%

10% INVERTED

toff

tf

90%

10%

VIN

10%

50%

90%

50%

PULSE WIDTH

Figure 9. Switching Test Circuit

Figure 10. Switching Waveforms

100

D=0.5

10-1

0.2

0.1

0.05

0.02

0.01

Single Pulse

10-2

10-2

10-1

100 101 102

Square Wave Pulse Duration (msec)

PDM

t1

t2

1. R JC (t)=r (t) * R JC

2. R JC=See Datasheet

3. TJM-TC = P* R JC (t)

4. Duty Cycle, D=t1/t2

103

104

Figure 11. Normalized Thermal Transient Impedance Curve

4

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