CEB16N10 데이터시트 PDF

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CEP16N10/CEB16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

D

D

G

S

CEB SERIES

TO-263(DD-PAK)

G

D

S

CEP SERIES

TO-220

G

S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

IDM

PD

100

±20

15.2

60

60

0.48

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Symbol

RθJC

RθJA

Limit

2.5

50

Units

V

V

A

A

W

W/ C

C

Units

C/W

C/W

Details are subject to change without notice .

1

Rev 1. 2010.Jan.

http://www.cet-mos.com

CEP16N10/CEB16N10

10 VDS=80V

ID=15A

8

6

4

2

0

0 2 4 6 8 10 12

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

VDD

VIN RL

D VOUT

VGS

RGEN G

S

102

RDS(ON)Limit

101

100

100ms

1ms

10ms

DC

TC=25 C

TJ=175 C

10-1 Single Pulse

10-1 100 101 102

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

td(on)

VOUT

t on

tr

td(off)

90%

10% INVERTED

toff

tf

90%

10%

VIN

10%

50%

90%

50%

PULSE WIDTH

Figure 9. Switching Test Circuit

Figure 10. Switching Waveforms

100

D=0.5

10-1

0.2

0.1

0.05

0.02

0.01

Single Pulse

10-2

10-2

10-1

100 101 102

Square Wave Pulse Duration (msec)

PDM

t1

t2

1. R JC (t)=r (t) * R JC

2. R JC=See Datasheet

3. TJM-TC = P* R JC (t)

4. Duty Cycle, D=t1/t2

103

104

Figure 11. Normalized Thermal Transient Impedance Curve

4

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