CEB12N5 데이터시트 PDF

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CEP12N5/CEB12N5

CEF12N5

N-Channel Enhancement Mode Field Effect Transistor

PRELIMINARY

FEATURES

Type

CEP12N5

CEB12N5

CEF12N5

VDSS

500V

500V

500V

RDS(ON)

0.54Ω

0.54Ω

0.54Ω

ID

12A

12A

12A d

@VGS

10V

10V

10V

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired.

D

DG

G

S

CEB SERIES

TO-263(DD-PAK)

G

D

S

CEP SERIES

TO-220

G

D

S

CEF SERIES

TO-220F

S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

TO-220/263

TO-220F

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

IDM e

PD

500

±30

12

48

166

1.3

12 d

48d

50

0.4

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Symbol

RθJC

RθJA

Limit

0.75

62.5

2.5

65

Units

V

V

A

A

W

W/ C

C

Units

C/W

C/W

This is preliminary information on a new product in development now .

Details are subject to change without notice .

1

Rev 1. 2008.Oct.

http://www.cet-mos.com

CEP12N5/CEB12N5

CEF12N5

10 VDS=400V

ID=12A

8

6

4

2

0

0 15 30 45 60

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

VDD

VIN RL

D VOUT

VGS

RGEN G

S

102 RDS(ON)Limit

100ms

101 1ms

10ms

DC

100

TC=25 C

TJ=150 C

10-1 Single Pulse

100 101 102 103

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

td(on)

VOUT

t on

tr

td(off)

90%

10% INVERTED

toff

tf

90%

10%

VIN

10%

50%

90%

50%

PULSE WIDTH

Figure 9. Switching Test Circuit

Figure 10. Switching Waveforms

100

D=0.5

0.2

10-1

0.1

0.05

0.02

0.01

Single Pulse

10-2

10-5

10-4

10-3

10-2

10-1

Square Wave Pulse Duration (msec)

PDM

t1

t2

1. R JC (t)=r (t) * R JC

2. R JC=See Datasheet

3. TJM-TC = P* R JC (t)

4. Duty Cycle, D=t1/t2

100

101

Figure 11. Normalized Thermal Transient Impedance Curve

4

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