Datasheet.kr   

STGD10NC60HD PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STGD10NC60HD
기능 very fast IGBT
제조업체 STMicroelectronics
로고 STMicroelectronics 로고 



전체 19 페이지

		

No Preview Available !

STGD10NC60HD 데이터시트, 핀배열, 회로
STGB10NC60HD - STGD10NC60HD
STGF10NC60HD - STGP10NC60HD
600 V - 10 A - very fast IGBT
Features
Low on-voltage drop (VCE(sat))
Low CRES / CIES ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
Applications
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
3
1
D²PAK
2
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB10NC60HDT4
GB10NC60HD
STGD10NC60HDT4
GD10NC60HD
STGF10NC60HD
GF10NC60HD
STGP10NC60HD
GP10NC60HD
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
December 2008
Rev 5
1/19
www.st.com
19




STGD10NC60HD pdf, 반도체, 판매, 대치품
Electrical characteristics STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE= 0)
IC= 1 mA
VCE(sat)
Collector-emitter saturation VGE = 15 V, IC = 5 A
voltage
VGE = 15 V, IC = 5 A,
TC = 125 °C
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250 µA
ICES
IGES
gfs (1)
Collector cut-off current
(VGE = 0)
Gate-emitter leakage
current (VCE = 0)
VCE = 600 V
VCE = 600 V, TC = 125 °C
VGE = ± 20 V
Forward transconductance VCE = 15 V, IC= 5 A
1. Pulse duration = 300 μs, duty cycle 1.5 %
Table 5.
Symbol
Dynamic
Parameter
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qg Total gate charge
Qge Gate-emitter charge
Qgc Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCE = 390 V, IC = 5 A,
VGE = 15 V
(see Figure 19)
Min. Typ. Max. Unit
600 V
1.9 2.5 V
1.7 V
3.75 5.75 V
150 µA
1 mA
±100 nA
3.5 S
Min. Typ. Max. Unit
365 pF
43 pF
8.3 pF
19.2 nC
4.5 nC
7 nC
4/19

4페이지










STGD10NC60HD 전자부품, 판매, 대치품
STGB10NC60HD, STGD10NC60HD, STGF10NC60HD, STGP10NC60HD Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics
Figure 3. Transfer characteristics
Figure 4. Transconductance
Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations
7/19

7페이지



구       성총 19 페이지
다운로드[ STGD10NC60HD.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
STGD10NC60H

N-channel IGBT

STMicroelectronics
STMicroelectronics
STGD10NC60HD

very fast IGBT

STMicroelectronics
STMicroelectronics

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵