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PDF STT6N3LLH6 Data sheet ( Hoja de datos )

Número de pieza STT6N3LLH6
Descripción N-channel Power MOSFET
Fabricantes STMicroelectronics 
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STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™
Power MOSFET in a SOT23-6L package
Datasheet - production data
4
5
6
3
2
1
SOT23-6L
Features
Order code
STT6N3LLH6
VDSS RDS(on) max ID PTOT
0.025 Ω
(VGS= 10 V)
30 V
6 A 1.6 W
0.036 Ω
(VGS= 4.5 V)
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Figure 1. Internal schematic diagram
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
Order code
STT6N3LLH6
Table 1. Device summary
Marking
Package
STG1
SOT23-6L
Packaging
Tape and reel
March 2014
This is information on a product in full production.
DocID023012 Rev 3
1/12
www.st.com

1 page




STT6N3LLH6 pdf
STT6N3LLH6
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
trr
Qrr
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
IRRM Reverse recovery current
ISD =6 A, VGS = 0
ISD = 6 A,
di/dt = 100 A/μs,
VDD = 16 V, TJ=150 °C
Figure 15
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
6A
-
24 A
- 1.1 V
- 10.6 - ns
- 2.8 - nC
- 0.5 - A
DocID023012 Rev 3
5/12
12

5 Page





STT6N3LLH6 arduino
STT6N3LLH6
5 Revision history
Revision history
Date
11-Oct-2012
24-Oct-2013
11-Mar-2014
Table 9. Document revision history
Revision
Changes
1 First release.
Modified: RDS(on) value on : Features table and in Table 4.
2
Document status promoted from preliminary to production data.
Updated Section 4: Package mechanical data.
3
Minor text changes
DocID023012 Rev 3
11/12
12

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