Datasheet.kr   

STS3P6F6 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STS3P6F6
기능 P-channel Power MOSFET
제조업체 STMicroelectronics
로고 STMicroelectronics 로고 


전체 16 페이지

		

No Preview Available !

STS3P6F6 데이터시트, 핀배열, 회로
STS3P6F6
P-channel 60 V, 0.13 typ., 3 A STripFET™ F6
Power MOSFET in a SO-8 package
Datasheet - production data
Features
8 76 5
4
123
SO-8
Figure 1. Internal schematic diagram
D (5,6,7,8)
Order code
STN3P6F6
VDSS
60 V
RDS(on)max
0.16 @ 10 V
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
ID
3A
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the 6th generation of STripFET™
technology, with a new gate structure. The
resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
G (4)
S (1,2,3)
Order code
STS3P6F6
Table 1. Device summary
Marking
Package
3K60
SO-8
Packaging
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
July 2014
This is information on a product in full production.
DocID024437 Rev 2
1/16
www.st.com
16




STS3P6F6 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 250 µA
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 60 V
VGS = 0, VDS = 60 V,
TC=125 °C
VDS = 0, VGS = ± 20 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 1.5 A
STS3P6F6
Min. Typ. Max. Unit
60 V
1 µA
10 µA
±100 nA
2 4V
0.13 0.16
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
Min.
-
VGS = 0, VDS = 48 V, f = 1 MHz
-
-
Typ.
340
40
20
Max. Unit
- pF
- pF
- pF
VDD = 48 V, ID = 3 A,
VGS = 10 V
(see Figure 14)
- 6.4 - nC
- 1.7 - nC
- 1.7 - nC
Note:
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 48 V, ID = 1.5 A,
RG = 4.7 , VGS = 10 V
(see Figure 13)
Min.
-
-
-
-
Typ.
64
5.3
14
3.7
Max. Unit
- ns
- ns
- ns
- ns
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
4/16 DocID024437 Rev 2

4페이지










STS3P6F6 전자부품, 판매, 대치품
STS3P6F6
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
400
AM15342v1
350 Ciss
300
Figure 9. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm)
AM15349v1
1.15
ID = 1mA
1.10
250
1.05
200
150 1
100
50
0
0
Coss
Crss
10 20 30 40 50 VDS(V)
0.95
0.90
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15344v1
1.10
1
ID=250 µA
0.90
0.80
0.70
0.60
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
1.8
VGS=10V
AM15350v1
1.6
1.4
1.2
1
0.8
0.6
0.4
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
1.05
TJ=-55°C
AM15345v1
0.95 TJ=25°C
0.85
0.75
0.65
TJ=175°C
0.55
2 4 6 8 ISD(A)
DocID024437 Rev 2
7/16

7페이지



구       성총 16 페이지
다운로드[ STS3P6F6.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
STS3P6F6

P-channel Power MOSFET

STMicroelectronics
STMicroelectronics

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵