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STS3P6F6 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STS3P6F6
기능 P-channel Power MOSFET
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STS3P6F6 데이터시트, 핀배열, 회로
STS3P6F6
P-channel 60 V, 0.13 typ., 3 A STripFET™ F6
Power MOSFET in a SO-8 package
Datasheet - production data
Features
8 76 5
4
123
SO-8
Figure 1. Internal schematic diagram
D (5,6,7,8)
Order code
STN3P6F6
VDSS
60 V
RDS(on)max
0.16 @ 10 V
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
ID
3A
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the 6th generation of STripFET™
technology, with a new gate structure. The
resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
G (4)
S (1,2,3)
Order code
STS3P6F6
Table 1. Device summary
Marking
Package
3K60
SO-8
Packaging
Tape and reel
Note:
For the P-channel Power MOSFET the actual polarity of the voltages and the current must
be reversed.
July 2014
This is information on a product in full production.
DocID024437 Rev 2
1/16
www.st.com
16




STS3P6F6 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 250 µA
IDSS
Zero gate voltage
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 60 V
VGS = 0, VDS = 60 V,
TC=125 °C
VDS = 0, VGS = ± 20 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 1.5 A
STS3P6F6
Min. Typ. Max. Unit
60 V
1 µA
10 µA
±100 nA
2 4V
0.13 0.16
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
Min.
-
VGS = 0, VDS = 48 V, f = 1 MHz
-
-
Typ.
340
40
20
Max. Unit
- pF
- pF
- pF
VDD = 48 V, ID = 3 A,
VGS = 10 V
(see Figure 14)
- 6.4 - nC
- 1.7 - nC
- 1.7 - nC
Note:
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
VDD = 48 V, ID = 1.5 A,
RG = 4.7 , VGS = 10 V
(see Figure 13)
Min.
-
-
-
-
Typ.
64
5.3
14
3.7
Max. Unit
- ns
- ns
- ns
- ns
For the P-channel Power MOSFET actual polarity of voltages and current has to be
reversed.
4/16 DocID024437 Rev 2

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STS3P6F6 전자부품, 판매, 대치품
STS3P6F6
Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
400
AM15342v1
350 Ciss
300
Figure 9. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm)
AM15349v1
1.15
ID = 1mA
1.10
250
1.05
200
150 1
100
50
0
0
Coss
Crss
10 20 30 40 50 VDS(V)
0.95
0.90
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
AM15344v1
1.10
1
ID=250 µA
0.90
0.80
0.70
0.60
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
1.8
VGS=10V
AM15350v1
1.6
1.4
1.2
1
0.8
0.6
0.4
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
1.05
TJ=-55°C
AM15345v1
0.95 TJ=25°C
0.85
0.75
0.65
TJ=175°C
0.55
2 4 6 8 ISD(A)
DocID024437 Rev 2
7/16

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STS3P6F6

P-channel Power MOSFET

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