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SH8K32 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SH8K32
기능 4V Drive Nch+Nch MOSFET
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SH8K32 데이터시트, 핀배열, 회로
4V Drive Nch+Nch MOSFET
SH8K32
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
Application
Switching
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8K32
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw 10μs, Duty cycle 1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
60
±20
±4.5
±18
1.0
18
2.0
150
55 to +150
Unit
V
V
A
A
A
A
W/TOTAL
°C
°C
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
2 2
(1) (2) (3) (4)
1 1
(1) (2)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A




SH8K32 pdf, 반도체, 판매, 대치품
SH8K32
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100 Coss
Crss
10
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.10 Typical Capacitance
vs. Drain-Source Voltage
Measurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Test Circuit
VGS
IG (Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Test Circuit
Pulse Width
50%
VGS 10%
VDS 10%
90%
50%
10%
td(on)
90%
tr
ton
td(off)
90%
tr
toff
Fig.1-2 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.12 - Rev.A

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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