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PDF STW19NM60N Data sheet ( Hoja de datos )
| Número de pieza | STW19NM60N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II
Power MOSFET in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
'
3
Order code
VDS
(@Tjmax)
STW19NM60N 650 V
RDS(on)
max.
ID PTOT
0.285 Ω 13 A 110 W
• Designed for automotive applications and
AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
!-V
Order codes
STW19NM60N
Table 1. Device summary
Marking
Package
19NM60N
TO-247
Packaging
Tube
October 2013
This is information on a product in full production.
DocID024392 Rev 2
1/13
www.st.com
13
1 page  
STW19NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 6.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
- 12 - ns
- 15 - ns
- 55 - ns
- 25 - ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 13 A, VGS=0
- 13 A
- 52 A
- 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =13 A, di/dt =100 A/µs, - 300
VDD = 60 V
- 4.0
(see Figure 16)
- 25
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 60 V
- 360
di/dt =100 A/µs, ISD = 13 A - 4.5
Tj = 150°C (see Figure 16) -
25
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024392 Rev 2
5/13
5 Page 
STW19NM60N
Package mechanical data
Figure 20. TO-247 drawing
0075325_G
DocID024392 Rev 2
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STW19NM60N.PDF ] | |
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