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부품번호 | STW13N80K5 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 24 페이지수
STB13N80K5, STF13N80K5,
STP13N80K5, STW13N80K5
N-channel 800 V, 0.37 Ω typ., 12 A SuperMESH™ 5 Power
MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS
RDS(on)
ID PTOT
STB13N80K5
190 W
STF13N80K5
800 V
STP13N80K5
STW13N80K5
0.45 Ω
12 A
35 W
190 W
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
S(3)
AM01476v1
Description
These devices are N-channel Zener-protected
Power MOSFETs realized in SuperMESH™ 5, a
revolutionary avalanche-rugged very high voltage
Power MOSFET technology based on an
innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STB13N80K5
STF13N80K5
STP13N80K5
STW13N80K5
Table 1. Device summary
Marking
Packages
13N80K5
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
June 2014
This is information on a product in full production.
DocID024348 Rev 4
1/24
www.st.com
24
Electrical characteristics
STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On/off states
Test conditions
Drain-source breakdown
V(BR)DSS voltage
VGS= 0, ID = 1 mA
Zero gate voltage drain
IDSS current
VGS = 0, VDS = 800 V
VGS = 0, VDS = 800 V,
Tc=125 °C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source
on-resistance
VDS = 0, VGS = ± 20 V
VDS = VGS, ID = 100 μA
VGS = 10 V, ID= 6 A
Min. Typ. Max. Unit
800 V
1 μA
50 μA
±10 μA
34 5V
0.37 0.45 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 870 -
- 50 -
VDS =100 V, f=1 MHz, VGS=0
-2 -
pF
pF
pF
(1)
Co(tr)
(2)
Co(er)
Equivalent capacitance time
related
Equivalent capacitance
VGS = 0, VDS = 0 to 640 V
energy related
RG Intrinsic gate resistance
f = 1MHz, ID=0
- 110 - pF
- 43 - pF
-5 -Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 640 V, ID = 12 A
VGS =10 V
(see Figure 22)
- 29 - nC
- 7 - nC
- 18 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/24 DocID024348 Rev 4
4페이지 STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5
Electrical characteristics
Figure 8. Safe operating area for TO-247
,' *,3*6$
$
V
V
PV
PV
Figure 9. Thermal impedance for TO-247
7M &
7F &
6LQJOHĆSXOVH
9'69
Figure 10. Output characteristics
ID (A)
30
25
VGS=11V
AM15690v1
10V
9V
Figure 11. Transfer characteristics
ID
(A) VDS=20V
30
AM15691v1
25
20 20
8V
15 15
10
7V
5
6V
0
0 5 10 15 20 VDS(V)
10
5
0
4 5 6 7 8 9 10 VGS(V)
Figure 12. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm)
1.1
ID=1mA
AM15699v1
1.05
1
0.95
0.9
0.85
-100 -50 0 50 100 150 TJ(°C)
Figure 13. Static drain-source on-resistance
RDS(on)
(Ω)
VGS=10V
AM15693v1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2 4 6 8 10 12 ID(A)
DocID024348 Rev 4
7/24
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STW13N80K5 | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |