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부품번호 | FGA70N33BTD 기능 |
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기능 | 70A PDP IGBT | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 9 페이지수
FGA70N33BTD
330V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.7V @ IC = 70A
• High input impedance
• Fast switching
• RoHS Compliant
Applications
• PDP System
August 2011
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
ICpulse(1)*
IC pulse(2)*
PD
VRRM
IF(AV)
IFSM
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ TC = 25oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Peak Repetitive Reverse Voltage of Diode
Average Rectified Forward Current of diode @ TC = 100oC
Non-repetitive Peak Surge Current of diode
60Hz Single Half-Sine wave
TJ, Tstg
TL
Operating Junction Temperature and Storage Temperrature
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D< 0.01, pluse width < 5usec
*IC_pulse limited by max Tj
©2011 Fairchild Semiconductor Corporation
FGA70N33BTD Rev. C0
1
G
E
Ratings
330
± 30
160
220
149
60
330
10
100
-55 to +150
300
Typ.
--
--
--
Max.
0.84
1.16
40
Units
V
V
A
A
W
W
V
A
A
oC
oC
Units
oC/W
oC/W
oC/W
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
220
TC = 25oC
176
20V
15V
12V
10V
132
88 8V
44
Figure 2. Typical Output Characteristics
220
TC = 125oC
20V
176
15V
132
12V
88 10V
44 8V
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
220
Common Emitter
VGE = 15V
176 TC = 25oC
TC = 125oC
132
5
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
5
220
Common Emitter
Vce = 20V
176 Tc=25oC
Tc=125oC
132
88 88
44 44
0
0123456
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.0
Common Emitter
VGE = 15V
1.8
70A
1.6
1.4
40A
1.2
1.0 IC = 20A
0.8
25 50 75 100 125 150
Collector-EmitterCase Temperature, TC [oC]
0
0 2 4 6 8 10 12 14 16
Gate-Emitter Voltage, Vge [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
40A 70A
4
IC = 20A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
FGA70N33BTD Rev. C0
4
www.fairchildsemi.com
4페이지 Typical Performance Characteristics
Figure 19. Reverse Recovery Current
4
200A/μs
3
2
di/dt = 100A/μs
1
0
5 10 20 30
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
40
40
Figure 20. Stored Charge
60
45
200A/μs
30
di/dt = 100A/μs
15
0
5 10 20 30
Forward Current, IF [A]
40
30
200A/μs
20 di/dt = 100A/μs
10
5 10 20 30
Forward Current, IF [A]
40
Figure 22.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 single pulse
1E-3
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
1
10
FGA70N33BTD Rev. C0
7
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FGA70N33BTD | 70A PDP IGBT | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |