Datasheet.kr   

SiHFU9010 PDF 데이터시트 ( Data , Function )

부품번호 SiHFU9010 기능
기능 Power MOSFET
제조업체 Vishay
로고 Vishay 로고 



전체 10 페이지

		

No Preview Available !

SiHFU9010 데이터시트, 핀배열, 회로
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
9.1
3.0
5.9
Single
0.50
S
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
D
P-Channel MOSFET
FEATURES
• Surface Mountable (Order as IRFR9010,
SiHFR9010)
• Straight Lead Option (Order as IRFU9010,
SiHFU9010)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR9010-GE3
Lead (Pb)-free
IRFR9010PbF
SiHFR9010-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9010TR-GE3a
IRFR9010TRPbFa
SiHFR9010T-E3a
DPAK (TO-252)
SiHFR9010TRL-GE3a
IRFR9010TRLPbFa
SiHFR9010TL-E3a
IPAK (TO-251)
SiHFU9010-GE3
IRFU9010PbF
SiHFU9010-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at - 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A.
c. ISD - 5.3 A, dI/dt - 80 A/μs, VDD 40 V, TJ 150 °C, suggested Rg = 24 .
d. 0.063" (1.6 mm) from case.
LIMIT
- 50
± 20
- 5.3
- 3.3
- 21
0.20
136
- 5.3
2.5
25
5.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0167-Rev. D, 04-Feb-13
1
Document Number: 91378
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SiHFU9010 pdf, 반도체, 판매, 대치품
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Normalized On-Resistance vs. Temperature
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0167-Rev. D, 04-Feb-13
4
Document Number: 91378
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










SiHFU9010 전자부품, 판매, 대치품
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
ISD controlled by duty factor “D”
D.U.T. - device under test
- VDD
Note
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 17 - For P-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91378.
S13-0167-Rev. D, 04-Feb-13
7
Document Number: 91378
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

7페이지



구       성총 10 페이지
다운로드[ SiHFU9010.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SiHFU9010

Power MOSFET

Vishay
Vishay
SiHFU9014

Power MOSFET

Vishay Siliconix
Vishay Siliconix

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵