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부품번호 | 4N65-N 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
4N65-N
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65-N is a high voltage power MOSFET
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristic. This
power MOSFET is usually used in high speed switching
applications including power supplies, PWM motor controls,
high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 3.1Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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4N65-N
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
10 μA
Gate-Source Leakage Current
Forward
Reverse
Breakdown Voltage Temperature Coefficient
IGSS
△BVDSS/△TJ
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
100 nA
-100 nA
0.6 V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 2.2A
2.0 4.0
2.6 3.1
V
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0V,
f = 1MHz
700 780
100 120
53 60
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
VDS= 520V,ID= 4.0A,
VGS= 10V (Note 1, 2)
30 70
100 140
150 190
140 180
110 130
9 15
5 11
ns
ns
ns
ns
nC
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 4.4A
Maximum Continuous Drain-Source
Diode Forward Current
IS
1.4 V
4.4 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0V, IS = 4.4A,
QRR dIF/dt = 100 A/μs (Note 1)
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
17.6
250
1.5
A
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R502-965.C
4페이지 4N65-N
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-965.C
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부품번호 | 상세설명 및 기능 | 제조사 |
4N65-C | N-CHANNEL POWER MOSFET | Unisonic Technologies |
4N65-E | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |