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부품번호 | 7N65K-MTQ 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
7N65K-MTQ
7A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N65K-MTQ is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications of switching power supplies and
adaptors.
FEATURES
* RDS(ON) < 1.6 Ω @ VGS = 10 V, ID = 3.5 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
7N65KL-TA3-T
7N65KG-TA3-T
TO-220
7N65KL-TF3-T
7N65KG-TF3-T
TO-220F
7N65KL-TF1-T
7N65KG-TF1-T
TO-220F1
7N65KL-TF2-T
7N65KG-TF2-T
TO-220F2
7N65KL-TF3T-T
7N65KG-TF3T-T
TO-220F3
7N65KL-TM3-T
7N65KG-TM3-T
TO-251
7N65KL-TN3-R
7N65KG-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12 3
GD S
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R205-020.E
7N65K-MTQ
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS VDS = 650V, VGS = 0V
10 μA
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
100 nA
-100 nA
0.53 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0 4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 3.5A
1.6 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0 MHz
875 1000 pF
88 120 pF
8 25 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID =0.5A,
RG =25Ω (Note 1, 2)
VDS=50V, ID=1.3A,
VGS=10V (Note 1, 2)
50 60
65 80
110 130
55 70
22.5 40
7.5
5
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 7 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.4 V
7A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
28 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
IS=7A, di/dt=100A/μs
320 ns
2.4 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-020.E
4페이지 7N65K-MTQ
TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-020.E
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부품번호 | 상세설명 및 기능 | 제조사 |
7N65K-MT | N-CHANNEL POWER MOSFET | UNISONIC TECHNOLOGIES |
7N65K-MTQ | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |