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SM8S24AT 데이터시트 PDF




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부품번호 SM8S24AT 기능
기능 TVS Diode ( Rectifier )
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SM8S24AT 데이터시트, 핀배열, 회로
www.vishay.com
SM8S10AT thru SM8S43AT
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218 Compatible
PRIMARY CHARACTERISTICS
VBR
PPPM (10 x 1000 μs)
PPPM (10 x 10 000 μs)
PD
VWM
IFSM
TJ max.
Polarity
11.1 V to 52.8 V
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
Package
DO-218AC
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AC
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1) Non-repetitive current pulse derated above TA = 25 °C
SYMBOL
PPPM
PD
IPPM (1)
IFSM
TJ, TSTG
VALUE
6600
5200
8.0
See next table
700
-55 to +175
UNIT
W
W
A
A
°C
Revision: 20-Mar-15
1 Document Number: 87734
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SM8S24AT pdf, 반도체, 판매, 대치품
www.vishay.com
SM8S10AT thru SM8S43AT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AC
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.004 (0.10) (NOM.)
0.028 (0.7)
Lead 2 / metal heatsink 0.020 (0.5)
0.116 (3.0)
0.093 (2.4)
Lead 1
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
Revision: 20-Mar-15
4 Document Number: 87734
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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