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기능 TVS Diode ( Rectifier )
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TA6F12A 데이터시트, 핀배열, 회로
www.vishay.com
TA6F6.8A thru TA6F51A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SlimSMATM
Top View
Bottom View
DO-221AC
PRIMARY CHARACTERISTICS
VBR
VWM
PPPM (10 x 1000 μs)
PD at TM = 65 °C
TJ max.
Polarity
6.8 V to 51 V
5.8 V to 43.6 V
600 W
6W
185 °C
Uni-directional
Package
DO-221AC (SlimSMA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
FEATURES
• Very low profile - typical height of 0.95 mm
• Junction passivation optimzed design passivated
anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Ideal for automated placement
• Uni-directional only
• Excellent clamping capability
• Peak pulse power: 600 W (10/1000 μs)
• AEC-Q101 qualified
• ESD capability: IEC 61000-4-2 level 4
- 15 kV (air)
- 8 kV (contact)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation
with a 10/1000 μs waveform
Peak pulse current
with a 10/1000 μs waveform
Power dissipation on infinite heatsink, TM = 65 °C
Power dissipation, TM = 25 °C
PPPM (1)
IPPM (1)
PD (2)
PD (3)
Operating junction and storage temperature range
TJ , TSTG
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
(2) Power dissipation mounted on infinite heatsink
(3) Power dissipation mounted on minimum recommended pad layout
VALUE
600
See next table
6
1.1
-65 to +185
UNIT
W
A
W
°C
Revision: 08-Oct-13
1 Document Number: 89939
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




TA6F12A pdf, 반도체, 판매, 대치품
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Cathode Band
DO-221AC (SlimSMA)
TA6F6.8A thru TA6F51A
Vishay General Semiconductor
0.106 (2.70)
0.098 (2.50)
0.057 (1.45)
0.049 (1.25)
0.039 (1.00)
0.035 (0.90)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.047 (1.20) Typ.: 0.019 (0.48)
0.030 (0.75)
Mounting Pad Layout
0.012 (0.30)
0.006 (0.15)
0.047 (1.20)
MIN.
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.060 (1.52)
MIN.
0.047 (1.20)
MIN.
Revision: 08-Oct-13
4 Document Number: 89939
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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부품번호상세설명 및 기능제조사
TA6F12A

TVS Diode ( Rectifier )

Vishay
Vishay

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