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부품번호 | UF830K-MT 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
UF830K-MT
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF830K-MT is a N-Channel enhancement mode
silicon gate power MOSFET is designed high voltage, high speed
power switching applications such as switching regulators,
switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON) < 1.50Ω @ VGS = 10V, ID = 2.5 A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830KL-TA3-T
UF830KG-TA3-T
UF830KL-TF3-T
UF830KG-TF3-T
UF830KL-TF1-T
UF830KG-TF1-T
UF830KL-TF2-T
UF830KG-TF2-T
UF830KL-TF3T-T
UF830KG-TF3T-T
UF830KL-TM3-T
UF830KG-TM3-T
UF830KL-TMS-T
UF830KG-TMS-T
UF830KL-TMS2-T
UF830KG-TMS2-T
UF830KL-TMS4-T
UF830KG-TMS4-T
UF830KL-TN3-R
UF830KG-TN3-R
UF830KL-TND-R
UF830KG-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R209-030.D
UF830K-MT
Power MOSFET
ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
ID(ON)
IDSS
IGSS
ID=250μA, VGS=0V
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
VDS= Rated BVDSS, VGS=0V
VDS=0.8×Rated BVDSS
VGS=0V, TJ= 125°C
VGS=±30V
500
4.5
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VGS=VDS, ID=250μA
ID=2.5A, VGS=10V (Note 2)
2.0
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=30V, ID≈0.5A RGS=25Ω
(Note 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VGS=10V, ID=1.3A, VDD=50V
IG=100mA (Note 3)
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
A
25 μA
250 μA
±100 nA
4.0 V
1.50 Ω
420 pF
66 pF
6.5 pF
48 ns
48 ns
42 ns
44 ns
13.8 nC
5.4 nC
6.0 nC
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
VSD TJ=25°C,ISD=4.5A, VGS=0V(Note 1)
Continuous Source to Drain Current
Pulse Source to Drain Current
ISD
ISDM
(Note 2)
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
MAX
1.6
5.5
18
UNIT
V
A
A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R209-030.D
4페이지 UF830K-MT
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source On-State Resistance
Characteristics
4
3
2
1
0
01 23 4
Drain to Source Voltage, VDS (V)
5
Continuous Source to Drain Current vs.
Source to Drain Voltage
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-030.D
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부품번호 | 상세설명 및 기능 | 제조사 |
UF830K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |