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7N10 데이터시트 PDF




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부품번호 7N10 기능
기능 N-CHANNEL POWER MOSFET
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7N10 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
7N10
7A, 100V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N10 is an N-Channel enhancement mode power
MOSFET, providing customers with excellent switching performance
and minimum on-state resistance. The UTC 7N10 uses planar stripe
and DMOS technology to provide perfect quality. This device can
also withstand high energy pulse in the avalanche and the
commutation mode.
The UTC 7N10 is generally applied in low voltage applications,
such as DC motor controls, audio amplifiers and high efficiency
switching DC/DC converters.
1
1
Power MOSFET
1 SOT-223
TO-252
TO-252D
FEATURES
* RDS(ON) < 0.35@ VGS =10V, ID =3.5A
* Fast Switching
* Improved dv/dt Capability
SYMBOL
1
TO-251
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 7N10G-AA3-R
7N10L-TM3-T
7N10G-TM3-T
7N10L-TN3-R
7N10G-TN3-R
7N10L-TND-R
7N10G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-251
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tape Reel
Tube
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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7N10 pdf, 반도체, 판매, 대치품
7N10
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0V, ID =250µA
Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25°C, ID =250µA
Drain-Source Leakage Current
IDSS
VDS =100V, VGS =0V
VDS =80V, TC =125°C
Gate-Source Leakage Current
IGSS VGS =±25V, VDS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID =250µA
VGS =10V, ID =3.5A
VDS =40V, ID =0.85A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS=0V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
(Note 1,2)
VDD=30V, ID=0.5A, RG=25
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =7A, VGS =0V
Reverse Recovery Time
Reverse Recovery Charge
trr VGS=0V, IS=7.3A,
QRR diF/dt=100A/µs
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
100 V
0.1 V/°C
1 µA
10 µA
±100 nA
2.0 4.0
0.144 0.35
1.85
V
S
380 450
70 85
11 15
pF
pF
pF
14.3
4.2
3.2
30 38
40 50
80 90
35 40
nC
nC
nC
ns
ns
ns
ns
7A
16
1.5
70
150
A
V
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N10 전자부품, 판매, 대치품
7N10
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source On-State Resistance
Characteristics
4
3.5 VGS=10V, ID=3.5A
3
2.5
2
1.5
1
0.5
0
0 0.2 0.4 0.6 0.8
Drain to Source Voltage, VDS (V)
7N10 SOA Chart (TO-252, TC=25°C)
10
100us
1
1ms
10ms
0.1 1D0C0,m1ss
0.1 1 10 100
Drain to Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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