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부품번호 | 4N90 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
전체 7 페이지수
UNISONIC TECHNOLOGIES CO., LTD
4N90
4 Amps, 900 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N90 is a N-channel enhancement MOSFET
adopting UTC’s advanced technology to provide customers with
DMOS, planar stripe technology. This technology is designed to
meet the requirements of the minimum on-state resistance and
perfect switching performance. It also can withstand high energy
pulse in the avalanche and communication mode.
The UTC 4N90 is particularly applied in high efficiency switch
mode power supplies.
FEATURES
* RDS(ON) < 4.2Ω @ VGS=10V
* High switching speed
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N90L-TA3-T
4N90G-TA3-T
4N90L-TF3-T
4N90G-TF3-T
4N90L-TF1-T
4N90G-TF1-T
4N90L-TF2-T
4N90G-TF2-T
4N90L-TF3T-T
4N90G-TF3T-T
4N90L-TM3-T
4N90G-TM3-T
4N90L-TN3-R
4N90G-TN3-R
4N90L-T3N-T
4N90G-T3N-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-252
TO-3PN
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient
∆BVDSS/∆TJ
ID=250μA,
Referenced
to
25°C
Drain-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
Gate- Source Leakage Current
Forward
Reverse
IGSS VGS=+30V, VDS=0V
IGSS VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A
(Note 1,2)
VDD=30V, ID=0.5A, RG=25Ω
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =4A, VGS=0V
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
900 V
1.05 V/°C
10
100
+100
-100
µA
µA
nA
nA
3.0 5.0
2.1 4.2
V
Ω
1000 1400
49 85
13 18
pF
pF
pF
33 50
8.9
10
70 100
188 220
188 220
88 120
nC
nC
nC
ns
ns
ns
ns
4A
16 A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
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TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
0 200 400 600 800 1000 1200
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
2.5
2
1.5
1
VGS=10V, ID=2A
0.5
0
01
23 4 5
Drain to Source Voltage, VDS (V)
6
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
01
234
5
Gate Threshold Voltage, VTH (V)
Body-Diode Continuous Current vs.
Source to Drain Voltage
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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부품번호 | 상세설명 및 기능 | 제조사 |
4N90 | N-Channel MOSFET Transistor | Inchange Semiconductor |
4N90 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |