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PDF PMZ290UNE2 Data sheet ( Hoja de datos )
| Número de pieza | PMZ290UNE2 | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMZ290UNE2
20 V, N-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.2 A
- 270 320 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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1 page  
NXP Semiconductors
PMZ290UNE2
20 V, N-channel Trench MOSFET
103 aaa-017051
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.10
0.05
0.25
10
10-3
0.02
0.01
0
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-017052
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.33
0.20
0.50
0.10
10
10-3
0.05
0.02
0.01
0
10-2
0.25
10-1
FR4 PCB, mounting pad for drain = 1 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ290UNE2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
PMZ290UNE2
20 V, N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
2
b
e
1
L
L1
3 b1
e1
A
A1
E
D
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
A1
max.
b
b1
D
E
e e1 L L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT883
SC-101
0
Fig. 18. Package outline DFN1006-3 (SOT883)
PMZ290UNE2
All information provided in this document is subject to legal disclaimers.
Product data sheet
24 March 2015
0.5
scale
1 mm
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 16
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMZ290UNE2.PDF ] | |
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