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PDF PMZB150UNE Data sheet ( Hoja de datos )
| Número de pieza | PMZB150UNE | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMZB150UNE
20 V, N-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Ultra thin package profile of 0.37 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.5 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.5 A
- 170 200 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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1 page  
NXP Semiconductors
PMZB150UNE
20 V, N-channel Trench MOSFET
103 aaa-016012
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.10
0.05
0.25
0
10
10-3
0.01
0.02
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-016013
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.33
0.20
0.50
0.10
0.05
0.02
0 0.01
10
10-3
10-2
0.25
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB150UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering
PMZB150UNE
20 V, N-channel Trench MOSFET
1.3
0.7 R0.05 (8x)
SOT883B
0.9
0.25
(2x)
0.3
(2x)
0.4
(2x)
0.3
0.4
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B)
0.6 0.7
sot883b_fr
PMZB150UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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