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부품번호 | PMZB200UNE 기능 |
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기능 | N-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
PMZB200UNE
30 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Ultra thin package profile of 0.37 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.4 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-8 -
8V
[1] - - 1.4 A
- 210 250 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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NXP Semiconductors
PMZB200UNE
30 V, N-channel Trench MOSFET
10
ID
(A)
1
Limit RDSon = VDS/ID
aaa-016973
tp = 10 µs
tp = 100 µs
10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 1 ms
tp = 10 ms
tp = 100 ms
10-2
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
315 360 K/W
[2] -
145 165 K/W
- 17 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
PMZB200UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 14
4페이지 NXP Semiconductors
PMZB200UNE
30 V, N-channel Trench MOSFET
4
ID VGS = 4.5 V
(A)
3
2.5 V
aaa-016974
2.0 V
1.8 V
10-3
ID
(A)
10-4
aaa-016975
2
1.5 V
10-5
(1) (2) (3)
1
1.2 V
0
01234
VDS (V)
Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0
0.5
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
1 1.5
VGS (V)
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
1.5
RDSon
(Ω)
1.2 V
1.5 V
aaa-016976
1.8 V
1.5
RDSon
aaa-016977
1.0 1.0
0.5
2.0 V
2.5 V
VGS = 4.5 V
0
01234
ID (A)
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0.5
Tj = 150 °C
Tj = 25 °C
0
012345
VGS (V)
ID = 1.5 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMZB200UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
7 / 14
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