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부품번호 | STPS30M60C 기능 |
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기능 | Power Schottky rectifier | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 10 페이지수
STPS30M60C
Power Schottky rectifier
Features
■ High current capability
■ Avalanche rated
■ Low forward voltage drop
■ High frequency operation
Description
The STPS30M60C is a dual diode Schottky
rectifier, suited for high frequency switch mode
power supply.
Packaged in TO-220AB, I2PAK and D2PAK, this
device is intended to be used in notebook, game
station and desktop adapters, providing in these
applications a good efficiency at both low and
high load.
Table 1. Device summary
Symbol
IF(AV)
VRRM
VF (typ)
Tj (max)
Value
2 x 15 A
60 V
0.380 V
150 °C
A1
A2
K
A2
K
A1
I2PAK
STPS30M60CR
K
K
K
A2
A1
D2PAK
STPS30M60CG-TR
A2
K
A1
TO-220AB
STPS30M60CT
Figure 1. Electrical characteristics(a)
VI
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
IAR
November 2011
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 12. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Doc ID 022020 Rev 1
1/10
www.st.com
10
Characteristics
STPS30M60C
Figure 6.
Non repetitive surge peak forward Figure 7.
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration
240 IM(A)
220
200
180
160
140
120
100
80
60
40 IM
20
0
1.E-03
t
δ = 0.5
1.E-02
1.E-01
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
t(s)
1.E+00
1.0 Zth(j-c)/Rth(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
Figure 8.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
1.E+02 IR(mA)
Tj = 150 °C
1.E+01
Tj = 125 °C
1.E+00
1.E-01
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
1.E-02
Tj = 25 °C
Figure 9.
C(pF)
10000
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
F = 1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
1000
1.E-03
0
VR(V)
100
10 20 30 40 50 60
1
VR(V)
10 100
Figure 10. Forward voltage drop versus
forward current (per diode)
1000.0 IFM(A)
100.0
Tj = 125 °C
(Maximum values)
Tj = 125 °C
(Typical values)
10.0
Tj = 25 °C
(Maximum values)
Figure 11. Thermal resistance junction to
ambient versus copper surface
under tab
80 Rth(j-a)(°C/W)
epoxy printed board copper thickness = 35 µm
70
60 D2PAK
50
40
30
1.0 20
0.1 VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10
0
0
SCu(cm2)
5 10 15 20 25 30 35 40
4/10 Doc ID 022020 Rev 1
4페이지 STPS30M60C
Package information
Table 6. D2PAK dimensions
Dimensions
Ref. Millimeters
Inches
L2
L
L3
Min.
Max.
Min.
Max.
A 4.40 4.60 0.173 0.181
A
A1 2.49
2.69 0.098 0.106
E
C2
A2 0.03
0.23 0.001 0.009
B 0.70
D
B2 1.14
0.93 0.027 0.037
1.70 0.045 0.067
A1
B2
B
C
R
C 0.45
C2 1.23
D 8.95
0.60 0.017 0.024
1.36 0.048 0.054
9.35 0.352 0.368
G E 10.00 10.40 0.393 0.409
G 4.88
5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624
M*
V2
* FLAT ZONE NO LESS THAN 2mm
L2
L3
M
1.27
1.40
2.40
1.40 0.050 0.055
1.75 0.055 0.069
3.20 0.094 0.126
R 0.40 typ.
0.016 typ.
V2 0° 8° 0° 8°
Figure 13. D2PAK footprint (dimensions in mm)
16.90
10.30
8.90
5.08
1.30
3.70
Doc ID 022020 Rev 1
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부품번호 | 상세설명 및 기능 | 제조사 |
STPS30M60C | Power Schottky rectifier | STMicroelectronics |
STPS30M60DJF | High efficiency power Schottky diode | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |