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PMZB600UNE 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PMZB600UNE은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 PMZB600UNE 기능
기능 N-channel Trench MOSFET
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PMZB600UNE 데이터시트, 핀배열, 회로
PMZB600UNE
20 V, N-channel Trench MOSFET
21 July 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
3. Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 0.6 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 0.6 A
- 470 620 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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PMZB600UNE pdf, 반도체, 판매, 대치품
NXP Semiconductors
PMZB600UNE
20 V, N-channel Trench MOSFET
10
ID
(A)
1
Limit RDSon = VDS/ID
aaa-012964
tp = 100 µs
tp = 1 ms
10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 10 ms
tp = 100 ms
10-2
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
305 360 K/W
[2] -
150 175 K/W
- - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
PMZB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 14

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PMZB600UNE 전자부품, 판매, 대치품
NXP Semiconductors
PMZB600UNE
20 V, N-channel Trench MOSFET
Symbol
Parameter
Source-drain diode
VSD source-drain voltage
Conditions
IS = 0.36 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
- 0.8 1.2 V
2.5
ID
(A)
2.0
1.5
4.5 V
aaa-008998
2.5 V
10-3
ID
(A)
10-4
aaa-008999
min typ
max
1.0
1.8 V
10-5
0.5 1.5 V
0
01
Tj = 25 °C
VGS = 1.2 V
234
VDS (V)
10-6
0
0.5
Tj = 25 °C; VDS = 5 V
1.0 1.5
VGS (V)
Fig. 7. Output characteristics: drain current as a
Fig. 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
3
1.5 V
2V
aaa-009000
3
aaa-009001
RDSon
(Ω) 1.2 V
1.8 V
2.5 V
RDSon
(Ω)
22
3V
1 1 Tj = 150 °C
VGS = 4.5 V
0
0 0.5 1.0 1.5 2.0 2.5
ID (A)
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
Tj = 25 °C
0
012345
VGS (V)
ID = 0.6 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMZB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 14

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부품번호상세설명 및 기능제조사
PMZB600UNE

N-channel Trench MOSFET

NXP Semiconductors
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