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PSMN2R4-30MLD 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PSMN2R4-30MLD은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 PSMN2R4-30MLD 기능
기능 N-channel MOSFET
제조업체 NXP Semiconductors
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PSMN2R4-30MLD 데이터시트, 핀배열, 회로
PSMN2R4-30MLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33
using NextPowerS3 Technology
11 August 2015
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue,
no wire bonds, qualified to 175 °C
Exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
4. Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
total power dissipation Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 30 V
[1] - - 70 A
- - 91 W
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PSMN2R4-30MLD pdf, 반도체, 판매, 대치품
NXP Semiconductors
120
Pder
(%)
80
40
PSMN2R4-30MLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
03aa16
160
ID
(A)
aaa-008523
120
80 (1)
40
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175 200
Tmb (°C)
(1) Capped at 70A due to package
Fig. 2. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
aaa-008524
tp = 10 us
100 us
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10 102
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
PSMN2R4-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
Min Typ Max Unit
- 1.44 1.65 K/W
© NXP Semiconductors N.V. 2015. All rights reserved
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PSMN2R4-30MLD 전자부품, 판매, 대치품
NXP Semiconductors
PSMN2R4-30MLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Qoss
output charge
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 15
trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 15 V; Fig. 16
[1]
ta reverse recovery rise
time
tb reverse recovery fall
time
S softness factor
Min Typ Max Unit
- 24 - nC
- 0.8 1.2 V
- 31.2 62.4 ns
-
23.5 47
nC
- 15.8 - ns
- 15.4 - ns
- 0.97 -
150
ID
(A)
125
100
75
[1] includes capacitive recovery
aaa-008528
120
ID 10 V 4.5 V
(A)
90
60
aaa-008526
VGS = 3 V
2.8 V
50
25
150°C
Tj = 25°C
30
2.6 V
2.4 V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS (V)
0
0 0.5 1 1.5 2 2.5
VDS (V)
Fig. 7. Transfer characteristics; drain current as a
Fig. 8. Output characteristics; drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN2R4-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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PSMN2R4-30MLD

N-channel MOSFET

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