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부품번호 | PSMN2R4-30MLD 기능 |
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기능 | N-channel MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
PSMN2R4-30MLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33
using NextPowerS3 Technology
11 August 2015
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
• Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
• Superfast switching with soft-recovery; s-factor > 1
• Low spiking and ringing for low EMI designs
• Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
• Optimised for 4.5 V gate drive
• Low parasitic inductance and resistance
• High reliability clip bonded and solder die attach Mini Power SO8 package; no glue,
no wire bonds, qualified to 175 °C
• Exposed leads for optimal visual solder inspection
3. Applications
• On-board DC-to-DC solutions for server and telecommunications
• Secondary-side synchronous rectification in telecommunication applications
• Voltage regulator modules (VRM)
• Point-of-Load (POL) modules
• Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
• Brushed and brushless motor control
4. Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Quick reference data
Parameter
Conditions
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 2
total power dissipation Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- - 30 V
[1] - - 70 A
- - 91 W
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NXP Semiconductors
120
Pder
(%)
80
40
PSMN2R4-30MLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
03aa16
160
ID
(A)
aaa-008523
120
80 (1)
40
0
0 50 100 150 200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175 200
Tmb (°C)
(1) Capped at 70A due to package
Fig. 2. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
aaa-008524
tp = 10 us
100 us
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10 102
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 4
PSMN2R4-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
Min Typ Max Unit
- 1.44 1.65 K/W
© NXP Semiconductors N.V. 2015. All rights reserved
4 / 13
4페이지 NXP Semiconductors
PSMN2R4-30MLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Qoss
output charge
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
Source-drain diode
VSD source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; Fig. 15
trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 15 V; Fig. 16
[1]
ta reverse recovery rise
time
tb reverse recovery fall
time
S softness factor
Min Typ Max Unit
- 24 - nC
- 0.8 1.2 V
- 31.2 62.4 ns
-
23.5 47
nC
- 15.8 - ns
- 15.4 - ns
- 0.97 -
150
ID
(A)
125
100
75
[1] includes capacitive recovery
aaa-008528
120
ID 10 V 4.5 V
(A)
90
60
aaa-008526
VGS = 3 V
2.8 V
50
25
150°C
Tj = 25°C
30
2.6 V
2.4 V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS (V)
0
0 0.5 1 1.5 2 2.5
VDS (V)
Fig. 7. Transfer characteristics; drain current as a
Fig. 8. Output characteristics; drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN2R4-30MLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
7 / 13
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PSMN2R4-30MLD | N-channel MOSFET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |