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PDF PSMN6R3-120ES Data sheet ( Hoja de datos )
| Número de pieza | PSMN6R3-120ES | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN6R3-120ES
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK
8 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic power supply equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Improved dynamic avalanche performance
• Suitable for standard level gate drive
• I2PAK package for slimline adaptors & height constrained applications
3. Applications
• AC-to-DC power supply
• Synchronous rectification
• Motor control
• Slimline adaptors & chargers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V;
Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup ≤ 120 V; unclamped; RGS = 50 Ω;
Fig. 3
Min Typ Max Unit
- - 120 V
- - 70 A
- - 405 W
4 5.7 6.7 mΩ
- 61.9 - nC
- 207.1 - nC
- - 532 mJ
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1 page  
NXP Semiconductors
PSMN6R3-120ES
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11
IDSS drain leakage current VDS = 120 V; VGS = 0 V; Tj = 25 °C
VDS = 120 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
RG
internal gate
f = 1 MHz
resistance (AC)
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 60 V; VGS = 10 V;
Fig. 14; Fig. 15
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
QGD gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15
Ciss
input capacitance
VDS = 60 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 16
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
PSMN6R3-120ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
Min Typ Max Unit
120 - - V
108 - - V
234V
1- - V
- - 4.6 V
-
0.1 1
µA
- - 500 µA
- 10 100 nA
- 10 100 nA
4 5.7 6.7 mΩ
- 16.5 19.4 mΩ
0.44 0.88 1.76 Ω
- 207.1 - nC
- 43.2 - nC
- 29.8 - nC
- 13.4 - nC
- 61.9 - nC
- 4.3 - V
- 11384 - pF
- 534 - pF
- 358 - pF
- 42.1 - ns
- 58.2 - ns
© NXP B.V. 2013. All rights reserved
5 / 12
5 Page 
NXP Semiconductors
PSMN6R3-120ES
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
11.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN6R3-120ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
© NXP B.V. 2013. All rights reserved
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