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PDF MRF373AR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF373AR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
• Integrated ESD Protection
• Excellent Thermal Stability
D
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1
MRF373ASR1
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF373AR1
G
S
CASE 360C–05, STYLE 1
NI–360S
MRF373ASR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF373AR1
MRF373ASR1
Symbol
VDSS
VGS
PD
Tstg
TJ
MRF373AR1
MRF373ASR1
MRF373AR1
MRF373ASR1
Symbol
RθJC
Value
70
– 0.5, +15
197
1.12
278
1.59
– 65 to +150
200
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Max
0.89
0.63
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF373AR1 MRF373ASR1
1
1 page  
f = 845 MHz
Zin
f = 875 MHz
Zo = 2 Ω
f = 845 MHz
ZOL* f = 875 MHz
VDD = 32 V, IDQ = 200 mA, Pout = 75 W CW
f
MHz
Zin
Ω
ZOL*
Ω
845 0.58 + j0.29 1.60 – j0.07
860 0.56 + j0.11
1.65 – j0.22
875 0.56 – j0.06 1.79 – j0.38
Zin = Complex conjugate of the source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
Note: ZOL* was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation distortion.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z in Z OL*
Figure 5. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF373AR1 MRF373ASR1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF373AR1.PDF ] | |
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