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Datasheet KMB110F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KMB110F | Schottky Surface Mount Flat Bridge Rectifier MBF
-+ ~~
C0.5
.157(4.0) .142(3.6) .043(1.1) .027(0.7)
.276(7.0) .260(6.6)
KMB12F THRU KMB110F
Schottky Surface Mount Flat Bridge R ectifier
Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Amperes
.071(1.8) .055(1.4)
FEATURES
· Surge overload rating: 30 amperes peak · Ideal for prin |  MDD | rectifier |
KMB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | KMB010P30QA | P-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Battery pack.
FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance.  KEC  | ||
| 2 | KMB012N30QA | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack..
FEATURES VDSS=30V, ID=12A. Drain to KEC | ||
| 3 | KMB014P30QA | Trench MOSFET
SEMICONDUCTOR
TECHNICAL DATA
KMB014P30QA
P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for port KEC | ||
| 4 | KMB030N30D | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB030N30D
N-Ch Trench MOSFET
General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for power management in PC, portable equipment and battery powered systems.
FEATURES VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON) KEC | ||
| 5 | KMB035N40DB | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
KMB035N40DB
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply.
FE KEC | ||
| 6 | KMB035N40DC | N-Channel Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply.
FEATURES VDSS=40V, ID=35A. Low Drai KEC | ||
| 7 | KMB050N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on KEC |
| Esta página es del resultado de búsqueda del KMB110F. Si pulsa el resultado de búsqueda de KMB110F se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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