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PDF HSB649T Data sheet ( Hoja de datos )
| Número de pieza | HSB649T | |
| Descripción | SILICON PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
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HI-SINCERITY
MICROELECTRONICS CORP.
HSB649T
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200103
Issued Date : 2001.12.01
Revised Date : 2005.12.02
Page No. : 1/4
Description
Low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C)
TO-126
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation ....................................................................................................................................... 1 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................................................... -160 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current (DC) .................................................................................................................................. -1.5 A
IC Collector Current (Pulse).................................................................................................................................. -3 A
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Max.)..................................................................................... 6.25 °C/W
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
-180
-
-
-160
-
-
-5 -
-
- - -10
- - -1
- - -1.5
100 - 200
30 -
-
- 140 -
- 27 -
Classification Of hFE1
Rank
Range
C
100-200
Unit
V
V
V
uA
V
V
MHz
pF
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-160V, IE=0
IC=-500mA, IB=-50mA
IC=-150mA, VCE=-5V
IC=-150mA, VCE=-5V
IC=-500mA, VCE=-5V
IC=-150mA ,VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HSB649T
HSMC Product Specification
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HSB649T.PDF ] | |
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