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부품번호 | IRFH7885PBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
80
3.9
36
1.2
146
V
m
nC
A
Applications
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Secondary Side Synchronous Rectifier
BLDC Motor Drive
FastIRFET™
IRFH7885PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low RDS(ON) (< 3.9m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH7885PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7885TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
± 20
22
146
93
250
3.6
156
0.03
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 8
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1000
100
10 TJ = 150°C
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode Forward Voltage
160
140
120
100
80
60
40
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01 0.01
IRFH7885PbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100 100µsec
10
Limited by Package
1msec
1 10msec
DC
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
4.5
4.0
3.5
3.0
2.5 ID = 150µA
ID = 250µA
ID = 1.0mA
2.0 ID = 1.0A
1.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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4페이지 PQFN 5x6 Outline "B" Package Details
IRFH7885PbF
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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May 12 ,2015
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ IRFH7885PBF.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
IRFH7885PBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |