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IRFH8334PBF-1 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRFH8334PBF-1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRFH8334PBF-1 자료 제공

부품번호 IRFH8334PBF-1 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


IRFH8334PBF-1 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRFH8334PBF-1 데이터시트, 핀배열, 회로
VDS
VGS max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
± 20
9.0
13.5
7.1
25i
V
V
mΩ
nC
A
Applications
Control MOSFET for high frequency buck converters
Features
Industry-standard pinout PQFN 5 x 6mm Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRFH8334PbF-1
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFH8334PBF-1
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH8334TRPBF-1
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
30
± 20
14
12
44hi
28hi
25i
100
3.2
30
0.026
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through ‡ are on page 9
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IRFH8334PBF-1 pdf, 반도체, 판매, 대치품
1000
100
TJ = 150°C
10 TJ = 25°C
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
45
i40
Limited By Source
Bonding Technology
35
30
25
20
15
10
5
0
25 50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
150
10
D = 0.50
1 0.20
0.10
0.05
0.1 0.02
0.01
IRFH8334PbF-1
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10
Limited by
iSource Bonding
Technology
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
01
DC
10
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
2.8
2.6
2.4
2.2
2.0
1.8 ID = 25μA
1.6 ID = 250μA
1.4 ID = 1.0mA
1.2 ID = 1.0A
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
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IRFH8334PBF-1 전자부품, 판매, 대치품
PQFN 5x6 Outline "E" Package Details
IRFH8334PbF-1
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH8334PBF-1

Power MOSFET ( Transistor )

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