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PDF IRFHM4231TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM4231TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
3.4
4.6
9.7
40
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
FastIRFET™
IRFHM4231TRPbF
HEXFET® Power MOSFET
PQFN 3.3 x 3.3 mm
Features
Low Charge (typical 9.7nC)
Low RDSon (<3.4m)
Low Thermal Resistance to PCB (<4.3°C/W)
Low Profile (<0.9mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM4231PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM4231TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
22
72
46
40
288
2.7
29
0.021
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
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June 5, 2014
1 page  
10.0
8.0
ID = 30A
200
160
IRFHM4231TRPbF
ID
TOP
6.8A
13A
BOTTOM 30A
6.0
TJ = 125°C
4.0
TJ = 25°C
120
80
40
2.0
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
1 pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulse Width
1.0E-01
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June 5, 2014
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| PDF Descargar | [ Datasheet IRFHM4231TRPBF.PDF ] | |
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