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Número de pieza | IRFHM4234TRPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
4.4
7.1
8.2
60
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
Top View
D5
D6
D7
D8
4G
3S
2S
1S
FastIRFET™
IRFHM4234TRPbF
HEXFET® Power MOSFET
PQFN 3.3 x 3.3 mm
Features
Low Charge (typical 8.2 nC)
Low RDSon (<4.4 m)
Low Thermal Resistance to PCB (<4.4°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Low Switching Losses
Lower Conduction Losses
Enable better Thermal Dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM4234PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM4234TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
20
63
44
60
270
2.8
28
0.022
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 01, 2014
1 page 10.0
8.0
6.0
ID = 30A
TJ = 125°C
160
120
80
IRFHM4234TRPbF
ID
TOP
7.5A
17A
BOTTOM 30A
4.0
2.0
2
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On– Resistance vs. Gate Voltage
40
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
1000
100
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
1 Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02 1.0E-01
tav (sec)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
Fig 14. Typical Avalanche Current vs. Pulsewidth
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 01, 2014
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFHM4234TRPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFHM4234TRPBF | Power MOSFET ( Transistor ) | International Rectifier |
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