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PDF IRFHM7194TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM7194TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDSS
RDS(on) max
(@ VGS = 10V)
Qg (typical)
Rg (typical)
ID
(@TC (Bottom) = 25°C)
100
16.4
13
2.0
34
V
m
nC
A
Applications
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Secondary Side Synchronous Rectifier
FastIRFET™
IRFHM7194TRPbF
HEXFET® Power MOSFET
PQFN 3.3 x 3.3 mm
Features
Low RDSon (<16.4m)
Low Charge (typical 13nC)
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Low Switching Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM7194TRPbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM7194TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
9.3
34
21
95
2.8
37
0.022
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 8
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March 31, 2015
1 page  
IRFHM7194TRPbF
60
ID = 20A
50
40
30
TJ = 125°C
20
10
0
4
TJ = 25°C
6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
1000
900
800
700
ID
TOP
2.4A
3.8A
BOTTOM 12A
600
500
400
300
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Single Avalanche Current vs. pulse Width
1.0E-01
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March 31, 2015
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